生命周期: | Active | 包装说明: | FLANGE MOUNT, O-CRFM-F4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
Is Samacsys: | N | 最小漏源击穿电压: | 65 V |
最大漏极电流 (ID): | 9 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | O-CRFM-F4 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 200 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | FLAT |
端子位置: | RADIAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ASI10832 | ASI |
获取价格 |
N-CHANNEL SILICON FET DEPLETION MODE | |
ASI10834 | ASI |
获取价格 |
RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, FM-4 | |
ASI10835 | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR | |
ASI10845 | ASI |
获取价格 |
VHF POWER MOSFET N-Channel Enhancement Mode | |
ASI10859 | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR | |
ASI10864 | ASI |
获取价格 |
RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, | |
ASI10866 | ASI |
获取价格 |
RF Power Bipolar Transistor, High Frequency Band, Silicon, NPN, 0.500 INCH, FM-4 | |
ASI10868 | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR | |
ASI10905 | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR | |
ASI12738 | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR |