Datasheet > ASI10770

ASI10770

更新时间： 2024-11-18 04:07:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	17K
描述
NPN SILICON RF POWER TRANSISTOR

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数据手册

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ASI10770 数据手册

MRF314A

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The MRF314A is Designed for Class

C Power Amplifier Applications up to

200 MHz.

PACKAGE STYLE .380 4L STUD

.112x45°

FEATURES:

• P_G= 10 dB min. at 30 W/ 150 MHz

• Withstands 30:1 Load VSWR

• Omnigold™ Metalization System

ØC

MAXIMUM RATINGS

#8-32 UNC-2A

4.0 A

65 V

I_C

V_CBO

V_CEO

V_EBO

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

35 V

.220 / 5.59

.980 / 24.89

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.450 / 11.43

.090 / 2.29

.155 / 3.94

.230 / 5.84

4.0 V

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.490 / 12.45

.100 / 2.54

.175 / 4.45

.750 / 19.05

60 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

2.9 ^OC/W

T_STG

θ_JC

ORDER CODE: ASI10770

CHARACTERISTICS ^T_C= 25 ^O

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 200 mA

BV_CES

BV_EBO

I_CBO

I_C= 200 mA

I_E= 10 mA

V_E= 28 V

4.0

2.0

---

h_FE

V_CE= 5.0 V

I_C= 200 mA

P_OUT= 30 W

C_OB

V_CB= 28 V

f = 1.0 MHz

f = 150 MHz

13.5

P_G

η_C

V_CC= 28 V

30:1 minimum without degration in output power

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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