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ASI10736

更新时间: 2024-11-17 22:47:55
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 20K
描述
NPN SILICON RF POWER TRANSISTOR

ASI10736 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.65最大集电极电流 (IC):1 A
基于收集器的最大容量:15 pF集电极-发射极最大电压:35 V
配置:SINGLE最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-CRPM-F4元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

ASI10736 数据手册

  
VLB40-12S  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .380 4L STUD  
The ASI VLB40-12S is Designed for  
A
.112x45°  
FEATURES:  
B
·
·
ØC  
· Omnigold™ Metalization System  
I
D
H
MAXIMUM RATINGS  
J
G
#8-32 UNC-2A  
5.0 A  
36 V  
IC  
F
E
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
18 V  
.220 / 5.59  
.980 / 24.89  
.370 / 9.40  
.004 / 0.10  
.320 / 8.13  
.100 / 2.54  
.450 / 11.43  
.090 / 2.29  
.155 / 3.94  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
4.0 V  
.385 / 9.78  
.007 / 0.18  
.330 / 8.38  
.130 / 3.30  
.490 / 12.45  
.100 / 2.54  
.175 / 4.45  
.750 / 19.05  
70 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
2.5 OC/W  
J
TSTG  
qJC  
ORDER CODE: ASI10736  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 50 mA  
IC = 50 mA  
IE = 10 mA  
VCE = 15 V  
VCE = 5.0 V  
36  
36  
18  
4.0  
V
BVCES  
BVCEO  
BVEBO  
ICES  
V
V
V
5.0  
mA  
---  
hFE  
IC = 5.0 A  
10  
13  
100  
COB  
VCB = 12.5 V  
VCC = 12.5 V  
f = 1.0 MHz  
f = 50 MHz  
100  
pF  
PG  
dB  
%
POUT = 40 W  
hC  
60  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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