ASI10723

更新时间： 2024-01-18 21:05:43

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	20K
描述
NPN SILICON RF POWER TRANSISTOR

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数据手册

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ASI10723 数据手册

VHB10-28S

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI VHB10-28S is Designed for

PACKAGE STYLE .380 4L STUD

.112x45°

FEATURES:

· Omnigold™ Metalization System

ØC

MAXIMUM RATINGS

1.0 A

65 V

I_C

#8-32 UNC-2A

V_CBO

V_CEO

V_CES

V_EBO

P_DISS

T_J

35 V

MINIMUM

MAXIMUM

inches / mm

DIM

inches

.220 / 5.59

.980 / 24.89

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.450 / 11.43

.090 / 2.29

.155 / 3.94

.230 / 5.84

65 V

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.490 / 12.45

.100 / 2.54

.175 / 4.45

.750 / 19.05

4.0 V

13.0 W

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

5.5 ^OC/W

T_STG

q_JC

ORDER CODE: ASI10723

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 200 mA

I_E= 10 mA

V_CB= 30 V

V_CE= 5.0 V

4.0

BV_CES

BV_CEO

BV_EBO

I_CBO

1.0

---

h_FE

I_C= 200 mA

P_OUT= 10 W

5.0

C_ob

V_CB= 28 V

V_CC= 28 V

f = 1.0 MHz

f = 175 MHz

P_G

h_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

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