Datasheet > ASI10720

ASI10720

更新时间： 2024-11-17 22:47:55

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	21K
描述
NPN SILICON RF POWER TRANSISTOR

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数据手册

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ASI10720 数据手册

VHB1-28T

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE TO-39

The ASI VHB1-28T is Designed for

45°

Ø A

FEATURES:

Ø D

· Omnigold™ Metalization System

MAXIMUM RATINGS

0.4 A

55 V

I_C

V_CBO

V_CEO

V_EBO

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

30 V

.200 / 5.080

3.5 V

.029 / 0.740

.028 / 0.720

.335 / 8.510

.305 / 7.750

.240 / 6.100

.045 / 1.140

.034 / 0.860

.370 / 9.370

.335 / 8.500

.260 / 6.600

5 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

35 ^OC/W

.500 / 12.700

.016 / 0.407

.020 / 0.508

T_STG

q_JC

ORDER CODE: ASI10720

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 5.0 mA

I_C= 0.1 mA

I_E= 0.1 mA

V_C= 55 V

3.5

BV_CER

BV_CBO

BV_EBO

I_CEX

R_BE= 10 W

V_BE= -1.5 V

I_B= 20 mA

100

I_CEO

V_E= 28 V

(S)

V_CE

I_C= 100 mA

V_CE= 5.0 V

1.0

200

I_C= 50 mA

5.0

h_FE

---

I_C= 360 mA

C_OB

V_CB= 28 V

V_CE= 28 V

f = 1.0 MHz

f = 175 MHz

3.0

P_G

P_OUT= 1.0 W

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

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