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ASI10714

更新时间: 2024-11-19 22:47:55
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

ASI10714 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.65Is Samacsys:N
最大集电极电流 (IC):4 A基于收集器的最大容量:110 pF
集电极-发射极最大电压:18 V配置:SINGLE
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRFM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

ASI10714 数据手册

  
VHB25-12F  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .380 4L FLG  
The ASI VHB25-12F is Designed for  
.112 x 45°  
B
A
FEATURES:  
Ø.125 NOM.  
FULL R  
·
J
.125  
·
· Omnigold™ Metalization System  
C
D
E
F
I
MAXIMUM RATINGS  
H
G
4.0 A  
36 V  
IC  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
.220 / 5.59  
.785 / 19.94  
.720 / 18.29  
.970 / 24.64  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
18 V  
.730 / 18.54  
.980 / 24.89  
.385 / 9.78  
.006 / 0.15  
.105 / 2.67  
.180 / 4.57  
.280 / 7.11  
.255 / 6.48  
4.0 V  
.004 / 0.10  
.085 / 2.16  
.160 / 4.06  
65 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
3.5 OC/W  
.240 / 6.10  
J
TSTG  
qJC  
ORDER CODE: ASI10714  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 15 mA  
IE = 5.0 mA  
VCB = 15 V  
VCE = 5.0 V  
18  
V
BVCES  
BVEBO  
ICBO  
36  
V
4.0  
V
5.0  
---  
mA  
---  
hFE  
IC = 250 mA  
POUT = 25 W  
20  
10  
COB  
VCB = 12.5 V  
VCE = 12.5 V  
f = 1.0 MHz  
f = 175 MHz  
110  
pF  
PG  
dB  
%
hC  
60  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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