5秒后页面跳转
ASI10707 PDF预览

ASI10707

更新时间: 2024-11-17 22:47:55
品牌 Logo 应用领域
ASI /
页数 文件大小 规格书
2页 27K
描述
VHF POWER MOSFET Silicon N-Channel Enhancement Mode

ASI10707 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:65 V
最大漏极电流 (ID):16 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

ASI10707 数据手册

 浏览型号ASI10707的Datasheet PDF文件第2页 
VFT300-28  
VHF POWER MOSFET  
Silicon N-Channel Enhancement Mode  
DESCRIPTION:  
The VFT300-28 is Designed for  
Wideband High Power VHF Amplifier  
Applications operating up to 250 MHz.  
PACKAGE STYLE .400 BAL FLG (D)  
A
B
FULL R  
(4X).060R  
.080x45°  
FEATURES:  
D
G
D
.1925  
· PG = 14 dB Typical at 175 MHz  
· hD = 55% Typ. at POUT = 300 Watts  
· Omnigold™ Metalization System  
E
M
D
C
G
F
Sources are connected  
to flange  
G
H
N
I
L
J
K
MAXIMUM RATINGS  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
ID  
16 A  
65 V  
.220 / 5.59  
.230 / 5.84  
A
B
C
D
E
F
.210 / 5.33  
.125 / 3.18  
V
(BR)DSS  
.380 / 9.65  
.580 / 14.73  
.390 / 9.91  
.620 / 15.75  
VDGR  
65 V  
.435 / 11.05  
G
H
1.090 / 27.69  
1.335 / 33.91  
.003 / 0.08  
.060 / 1.52  
.100 / 2.54  
1.105 / 28.07  
1.345 / 34.16  
.007 / 0.18  
.070 / 1.78  
.115 / 2.92  
.230 / 5.84  
.407 / 10.34  
.870 / 22.10  
VGS  
PDISS  
TJ  
± 40 V  
I
300 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
0.6 OC/W  
J
K
L
M
N
.395 / 10.03  
.850 / 21.59  
TSTG  
qJC  
ORDER CODE: ASI10707  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
V(BR)DSS  
IDSS  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
VGS = 0 V  
VDS = 28 V  
VDS = 0 V  
VDS = 10 V  
VGS = 10 V  
VDS = 10 V  
IDS = 100 mA  
VGS = 0 V  
VGS = 20 V  
ID = 100 mA  
ID = 10 A  
65  
V
mA  
m A  
V
5.0  
1.0  
5.0  
1.5  
IGSS  
VGS  
1.0  
VDS  
V
GFS  
ID = 5 A  
3500  
mS  
Ciss  
Coss  
Crss  
375  
188  
26  
VGS = 28 V  
VDS = 0 V  
F = 1.0 MHz  
POUT = 300 W  
pF  
GPS  
VDD = 28 V  
f = 175 MHz  
IDQ = 2 x 250 mA  
12  
50  
14  
55  
dB  
%
h D  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  

与ASI10707相关器件

型号 品牌 获取价格 描述 数据表
ASI10708 ASI

获取价格

VHF POWER MOSFET N-Channel Enhancement Mode
ASI10709 ASI

获取价格

VHF POWER MOSFET N-Channel Enhancement Mode
ASI10710 ASI

获取价格

VHF POWER MOSFET N-Channel Enhancement Mode
ASI10711 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
ASI10712 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
ASI10713 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
ASI10714 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
ASI10715 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
ASI10716 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
ASI10717 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR