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ASI10682

更新时间: 2024-01-15 21:50:14
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 20K
描述
NPN SILICON RF POWER TRANSISTOR

ASI10682 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-XRPM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.65
最大集电极电流 (IC):2.5 A基于收集器的最大容量:25 pF
集电极-发射极最大电压:16 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-XRPM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

ASI10682 数据手册

  
ULBM10  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI ULBM10 is Designed for  
PACKAGE STYLE .280 4L STUD  
A
FEATURES:  
45°  
·
·
B
· Omnigold™ Metalization System  
C
D
J
MAXIMUM RATINGS  
E
I
F
2.5 A  
36 V  
IC  
G
H
K
#8-32 UNC  
VCBO  
VCEO  
VCES  
VEBO  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
16 V  
1.010 / 25.65  
.220 / 5.59  
.270 / 6.86  
.003 / 0.08  
.117 / 2.97  
1.055 / 26.80  
.230 /5.84  
A
B
C
D
E
F
G
H
I
36 V  
.285 / 7.24  
.007 / 0.18  
.137 / 3.48  
4.0 V  
.572 / 14.53  
.130 / 3.30  
58 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
7.0 OC/W  
.245 / 6.22  
.255 / 6.48  
.640 / 16.26  
.175 / 4.45  
.275 / 6.99  
.217 / 5.51  
.285 / 7.24  
J
K
TSTG  
qJC  
ORDER CODE: ASI10682  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 20 mA  
IC = 25 mA  
IE = 10 mA  
VCB = 15 V  
VCE = 10 V  
VCE = 5.0 V  
16  
V
BVCES  
BVEBO  
ICEO  
36  
V
4.0  
V
2.0  
3.0  
---  
mA  
mA  
---  
ICES  
hFE  
IC = 1.0 A  
10  
Cob  
VCB = 12.5 V  
VCC = 12.5 V  
f = 1.0 MHz  
f = 470 MHz  
25  
pF  
PG  
POUT = 10 W  
7.0  
dB  
%
hC  
60  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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