Datasheet > ASI10553

ASI10553

更新时间： 2024-02-04 08:36:19

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	19K
描述
NPN SILICON RF POWER TRANSISTOR

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数据手册

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ASI10553 数据手册

AVD002P

NPN SILICON RF POWER TRANSISTOR

PACKAGE STYLE .280 4L PILL (A)

DESCRIPTION:

.100x45°

The ASI AVD002P is Designed for

FEATURES:

Ø G

· Omnigold™ Metalization System

MAXIMUM RATINGS

250 mA

I_C

MINIMUM

inches mm

MAXIMUM

inches mm

DIM

37 V

V_CC

P_DISS

T_J

.095 / 2.41

.195 / 4.95

1.000 / 25.40

.004 / 0.10

.050 / 1.27

.105 / 2.67

.205 / 5.21

10 W @ T_C£ 100 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

10 ^OC/W

.007 / 0.18

.065 / 1.65

.145 / 3.68

.285 / 7.21

.275 / 6.99

T_STG

q_JC

ORDER CODE: ASI10553

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 1 mA

I_C= 5 mA

I_E= 1 mA

V_CE= 35 V

V_CE= 5.0 V

BV_CER

BV_EBO

I_CES

R_BE= 10 W

3.5

1.0

---

h_FE

I_C= 100 A

300

P_G

9.0

V_CC= 35 V P_OUT= 2.0 W

MHz

f = 1025 – 1150

h_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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