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ASI10498 PDF预览

ASI10498

更新时间: 2024-02-27 06:01:18
品牌 Logo 应用领域
ASI 放大器晶体管
页数 文件大小 规格书
3页 39K
描述
RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN,

ASI10498 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.65Is Samacsys:N
最大集电极电流 (IC):12.5 A集电极-发射极最大电压:33 V
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):750 MHzBase Number Matches:1

ASI10498 数据手册

 浏览型号ASI10498的Datasheet PDF文件第2页浏览型号ASI10498的Datasheet PDF文件第3页 
BLV33  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI BLV33 is a Common Emitter  
Device Designed for Class A  
Television Applications.  
PACKAGE STYLE .500 4L STUD  
FEATURES INCLUDE:  
Gold Metalization  
Emitter Ballasting  
MAXIMUM RATINGS  
12.5 A  
65 V  
IC  
VCESM  
VCEO  
PDISS  
TJ  
33 V  
132 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
1.5 °C/W  
1 = COLLECTOR  
2 & 4 = EMITTER  
TSTG  
θJC  
3 = BASE  
ORDER CODE: ASI10498  
CHARACTERISTICS TC = 25°C  
SYMBOL  
BVCEO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 100 mA  
IC = 25 mA  
IE = 10 mA  
VCE = 30 V  
VCE = 25 V  
33  
V
BVCES  
BVEBO  
ICES  
65  
V
4.0  
V
10  
mA  
---  
hFE  
IC = 3.0 A  
15  
100  
VCB = 25 V  
VCE = 25 V  
VCE = 25 V  
f = 1.0 MHz  
f = 1.0 MHz  
f = 1.0 MHz  
Cc  
Cre  
Ccs  
155  
88  
IC = 100 mA  
IC = 100 mA  
pF  
3.0  
680  
750  
VCB = 25 V  
VCB = 25 V  
IE = 3.0 A  
IE = 6.0 A  
fT  
MHz  
---  
GP  
VCE = 25 V  
IC = 3.2 A  
Pout = 19 W  
9.0  
9.7  
f = 224.25 MHz  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
1/3  
Specifications are subject to change without notice.  

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