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J02015A

更新时间: 2024-02-13 08:44:46
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 17K
描述
NPN SILICON RF POWER TRANSISTOR

J02015A 数据手册

  
J02015A  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI J02015A is Designed for  
High Power Class C Amplifier in, 225  
to 400 MHz Military Communication  
Equipment.  
PACKAGE STYLE .500 6L FLG  
A
C
FEATURES:  
2x ØN  
FULL R  
D
Internal Input Matching Network  
PG = 8.4 dB at 70 W/400 MHz  
Omnigold™ Metalization System  
B
E
.725/18,42  
F
G
M
K
MAXIMUM RATINGS  
H
I
L
J
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
8.0 A  
60 V  
IC  
.150 / 3.43  
.160 / 4.06  
A
B
C
D
E
F
G
H
I
.045 / 1.14  
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
.210 / 5.33  
.835 / 21.21  
.200 / 5.08  
.490 / 12.45  
.003 / 0.08  
.220 / 5.59  
.865 / 21.97  
.210 / 5.33  
.510 / 12.95  
.007 / 0.18  
30 V  
4.0 V  
.125 / 3.18  
.725 / 18.42  
220 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
1.25 °C/W  
.970 / 24.64  
.090 / 2.29  
.150 / 3.81  
.980 / 24.89  
.105 / 2.67  
.170 / 4.32  
.285 / 7.24  
.135 / 3.43  
J
K
L
M
N
.120 / 3.05  
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 50 mA  
IE = 10 mA  
30  
V
60  
BVCES  
BVEBO  
ICBO  
V
4.0  
V
V
CB = 30 V  
CE = 5.0 V  
5.0  
80  
mA  
---  
V
IC = 2.0 A  
20  
hFE  
VCB = 28 V  
VCC = 28 V  
f = 1.0 MHz  
f = 400 MHz  
80  
COB  
pF  
8.4  
PG  
dB  
%
POUT = 70 W  
60  
ηD  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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