Datasheet > ASDM30R024NQ

ASDM30R024NQ

更新时间： 2024-09-16 17:15:31

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
8页	1606K
描述
PDFN5*6-8

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中文翻译

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数据手册

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ASDM30R024NQ 数据手册

ASDM30R024NQ

30V N-Channel MOSFET

Product Summary

Features

●

VDS

Low thermal impedance

Fast switching speed

100% avalanche tested

1.4

167

mΩ

RDS(on),typ@ VGS=10V

I^D

Low R

trench technology

DS(on)

Application

●

DC/DC conversion

Power switch

Motor drives

●

PDFN5*6-8

N-Channel

1. Maximum ratings

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Limit

Unit

Drain-source voltage

Gate-source voltage

V_GS

±2 0

167

105

T_C=25

C ⁽¹⁾

I_D

Continuous drain current

T_C=100°C

T_A=25°

C ⁽⁴⁾

Pulsed drain current⁽²⁾

I_D,pulse

E_AS

668

360

83.3

2.7

Avalanche energy, single pulse⁽³⁾

T_C=25

T_A=25

°C

P_D

Power dissipation

C ⁽⁴⁾

T_J, T_stg

Operating junction and storage temperature range

-55 to 150

℃

2. Thermal resistance ratings

Thermal resistance ratings

Parameter

Symbol

R_θJC

Max.

Unit

Thermal resistance, junction-to-case

Thermal resistance, junction-to-ambient ⁽⁴⁾

Steady state

1.5

°C/W

R_θJA

www.ascendsemi.com

0755-86970486

Jun 2022 Version1.0

1/8

12 3 4 5 6 7 8

中文翻译

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