Datasheet > ASDM30P70AQ

ASDM30P70AQ

更新时间： 2024-09-16 17:15:23

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
7页	1460K
描述
PDFN5*6-8

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中文翻译

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数据手册

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ASDM30P70AQ 数据手册

ASDM30P70AQ

30V P-Channel MOSFET

Features

Product Summary

Advanced Trench Technology

V DS

-30

5.4

-70

mΩ

Charge

· Excellent R_DS(ON)and Low Gate

· Lead free product is acquired

R DS(on),Typ@ VGS=-10 V

I D

Application

· PWM Applications

· Load Switch

· Power Management

DFN5*6-8

P-Channel

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

-30

±20

Gate-Source Voltage

T_C= 25℃

-70

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_C= 100℃

-33

I_DM

E_AS

-280

144

Single Pulsed Avalanche Energy ^note2

P_D

Power Dissipation

T_C= 25℃

R_θJC

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

3.8

℃/W

℃

T_J, T_STG

-55 to +150

www.ascendsemi.com

0755-86970486

NOV 2021 Version1.0

1/7

12 3 4 5 6 7

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