Datasheet > ASDM30P35E

ASDM30P35E

更新时间： 2024-09-16 17:15:27

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
7页	1260K
描述
PDFN3*3-8

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中文翻译

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ASDM30P35E 数据手册

ASDM30P35E

-30V P-Channel MOSFET

Product Summary

Features

• Low RDS(ON)

• High Current capability

• Reliable and Rugged

• ROHS Compliant & Halogen-Free

V_DS

-30

8.2

-35

mΩ

R DS(on),TYP@ VGS=10 V

I _D

Application

• Notebook AC-in load switch

• Battery protection charge/discharge

top view

PDFN3.3*3.3-8

Absolute Maximum Ratings (T_J=25°C Unless Otherwise Noted)

Symbol

VDSS

VGSS

T_J

Parameter

Rating

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

Pulse Drain Current Tested

150

°C

TSTG

-55 to 150

-35

I_S

①

T^c=25°C

Tc=100°C

IDM

-140

-35

Continuous Drain Current

-19

T^c=25°C

P_D

Maximum Power Dissipation

Thermal Characteristics

Symbol

Parameter

Rating

3.6

Unit

°C/W

RJC

Thermal Resistance-Junction to Case

Steady State

③

RJA

Thermal Resistance-Junction to Ambient

Note

①

②

③

：

Max. current is limited by bonding wire

IS tested and pulse width are limited by maximum junction temperature 150^oC

Surface Mounted on 1in FR-4 board with 1oz.

www.ascendsemi.com

0755-86970486

NOV 2020 Version1.0

1/7

12 3 4 5 6 7

中文翻译

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