Datasheet > ASDM30N150Q

ASDM30N150Q

更新时间： 2024-10-03 17:15:39

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
9页	1592K
描述
PDFN5*6-8

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中文翻译

获取价格

数据手册

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ASDM30N150Q 数据手册

ASDM30N150Q

30V N-Channel MOSFET

Features

⚫ High ruggedness

Product Summary

⚫ Low Gate Charge (Typ 143nC)

⚫ Improved dv/dt Capability

⚫ 100% Avalanche Tested

V DS

1.7

150

mΩ

R DS(on),Typ@ VGS=10 V

I D

⚫ Application:Synchronous

Rectification,

Li Battery Protect Board, Inverter

top view

DFN5x6-8

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

Drain to source voltage

150*

78*

Continuous drain current (@T_c=25^oC)

Continuous drain current (@T_c=100^oC)

Drain current pulsed(note 1)

I_D

I_DM

600

Continuous drain current (@T_a=25^oC)

Continuous drain current (@T_a=70^oC)

Gate to source voltage

I_DSM

V_GS

E_AS

± 20

576

Single pulsed avalanche energy

Repetitive avalanche energy

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Peak diode recovery dv/dt

Total power dissipation (@T_c=25^oC)

Total power dissipation (@T_a=25^oC)

P_D

2.6

T_STG, T_JOperating junction temperature & storage temperature

-55 ~ + 150

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

R_thjc

Parameter

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

Value

1.8

Unit

^oC/W

R_thja

Note: R_thjais the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R_thjcis guaranteed by design while R_thcais determined by the user's

board design.

www.ascendsemi.com

0755-86970486

DEC 2018 Version2.0

1/9

12 3 4 5 6 7...9

中文翻译

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