Datasheet > ASDM23GN90P

ASDM23GN90P

更新时间： 2024-05-23 22:22:25

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
11页	459K
描述
TO-220

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中文翻译

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数据手册

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ASDM23GN90P 数据手册

ASDM23GN90P

900V N-Channel Power MOSFET

Features

Product Summary

• Easy to use, compatible with standard gate drivers

• Superior reliability with BV_DSSover 1500V

VDS

mΩ

900

175

• Low Q_RR, no free-wheeling diode required

• Excellent Q_Gx R_DS(on)figure of merit (FOM)

• Low switching loss

RDS(on),Max @VGS= 8V

• RoHS compliant and Halogen-free

Application

• High efficiency power supplies

• Telecom and datacom

• Servo motors

• Automotive

Maximum ratings, at T_C=25 °C, unless otherwise specified

Symbol

Parameter

Continuous drain current @T_C=25°C

Continuous drain current @T_C=100°C

Limit Value

Unit

I_D

Pulsed drain current @T_C=25°C (pulse width: 10us)

I_DM

Pulsed drain current @T_C=150°C (pulse width: 10us)

Drain to source voltage (T_J= -55°C to 150°C)

Transient drain to source voltage ^a

Gate to source voltage

900

V_DSS

V_TDSS

V_GSS

P_D

1000

±20

Maximum power dissipation @ T_C=25°C

Case

Operating temperature

Junction

100

°C

T_C

-55 to 150

260

T_J

T_S

Storage temperature

T_CSOLD

Soldering peak temperature

Thermal Resistance

Symbol

Parameter

Typical

Unit

RΘJC

Junction-to-case

Junction-to-ambient

1.25

°C /W

RΘJA

°C /W

Sep 2021 Version1.0

1/11

Ascend Semicondutor Co.,Ltd

12 3 4 5 6 7...11

中文翻译

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