Datasheet > ASDM23GN65P

ASDM23GN65P

更新时间： 2024-05-23 22:23:19

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
11页	515K
描述
TO-220

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中文翻译

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数据手册

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ASDM23GN65P 数据手册

ASDM23GN65P

650V N-Channel Power MOSFET

Features

Product Summary

• Easy to use, compatible with standard gate drivers

• Low Q_rr, no free-wheeling diode required

• Excellent Q_gx R_DS(on)product (FOM)

VDS

mΩ

650

150

RDS(on),Max @VGS = 8V

• Low switching loss

• RoHS compliant and Halogen-free

Application

• Power adapters

• Telecom and datacom

• Automotive

• Servo motors

Maximum ratings, at T_C=25 °C, unless otherwise specified

Symbol

Parameter

Limit Value

Unit

Continuous drain current @T_C=25°C

I_D

Continuous drain current @T_C=100°C

Pulsed drain current @T_C=25°C (pulse width:

10us)

I_DM

Pulsed drain current @T_C=150°C (pulse width:

10us)

V_DSS

V_GSS

P_D

Drain to source voltage (T_J= -55°C to 150°C)

650

±20

Gate to source voltage

Maximum power dissipation @T_C=25°C

Case

100

°C

T_C

-55 to 150

260

Operating temperature

T_J

Junction

T_S

Storage temperature

T_CSOLD

Soldering peak temperature

Thermal Resistance

Symbol

Parameter

Typical

Unit

RΘJC

Junction-to-case

1.25

°C/W

RΘJA

Junction-to-ambient

°C/W

Sep 2021 Version1.0

1/11

Ascend Semicondutor Co.,Ltd

12 3 4 5 6 7...11

中文翻译

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