256K X 36, 512K X 18
AS8C803625A
AS8C801825A
3.3V Synchronous ZBTTM SRAMs
3.3V I/O, Burst Counter
Flow-Through Outputs
Features
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256K x 36, 512K x 18 memory configuration
in and control signal registers. The outputs are
flow-through (no output data register). Output
enable is the only asynchronous signal and can be
used to disable the outputs at any given time.
A clock Enable (CEN) pin allows operation of
the 803625A/801825A to be suspended as long
as necessary. All synchronous inputs are ignored
when CEN is high and the internal device
registers will hold their previous values.
There are three chip enable pins (CE1, CE2,
CE2) that allow the user to deselect the device
when desired. If any one of these three is not
asserted when ADV/LD is low, no new memory
operation can be initiated. However, any pending
data transfers (reads or writes) will be
completed. The data bus will tri-state one cycle
after the chip is deselected or a write is initiated.
The 803625A/801825A have an on-chip burst
Supports high performance system speed –
100MHz (7.5ns Clock-To-Data Access)
ZBTTM Feature – No dead cycles between write
and read cycles
Internally synchronized output buffer enable
eliminates the need to control OE
Single R/W (READ/WRITE) control pin
4-word burst capability (Interleaved or linear)
Individual byte write (BW1 – BW4) control
(May tie active)
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Three chip enables for simple depth expansion
3.3V power supply (±5%)
3.3V (±5%) I/O Supply (VDDQ)
Power down controlled by ZZ input
Packaged in a JEDEC standard 100-pin plastic
thin quad flatpack (TQFP)
counter.
In the burst mode, the 803625A /
Description
801825A can provide four cycles of data for a
single address presented to the SRAM. The order
of the burst sequence is defined by the LBO input
The 803625A/801825A are 3.3V high-speed
9,437,184-bit (9 Megabit) synchronous SRAMs
organized as 256K x 36/512K x 18. They are
designed to eliminate dead bus cycles when
turning the bus around between reads and writes,
or writes and reads. Thus they have been given
the name ZBTTM, or Zero Bus Turnaround.
Address and control signals are applied to the
SRAM during one clock cycle, and on the next
clock cycle the associated data cycle occurs, be it
read or write.
pin.
interleaved burst sequence. The ADV/LD signal is
used to load new external address
The LBO pin selects between linear and
a
(ADV/LD=LOW) or increment the internal burst
counter (ADV/LD=HIGH).
The
803625A/801825A
SRAMs
utilize
Alliance’s latest high-performance CMOS process
and are packaged in a JEDEC Standard 14mm x
20mm 100-pin plastic thin quad flatpack (TQFP).
The 803625A/801825A contain address, data-
Pin Description Summary
A0 – A18
Address Inputs
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Static
Asynchronous
Synchronous
Static
CE1, CE2, CE2
Chip Enables
OE
Output Enable
R/W
CEN
Read/Write Signal
Clock Enable
BW1, BW2, BW3, BW4
CLK
Individual Byte Write Selects
Clock
ADV/LD
LBO
ZZ
Advance Burst Address/Load New Address
Linear / Interleaved Burst Order
Sleep Mode
I/O0 – I/O31, I/OP1 – I/OP4
VDD, VDDQ
VSS
Data Input / Output
Core Power, I/O Power
Ground
Supply
Supply
Static
5298 tbl 01
NOVEMBER 2010
5秒后页面跳转
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