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AS7C3364FT36B-75TQCN PDF预览

AS7C3364FT36B-75TQCN

更新时间: 2024-11-19 23:00:35
品牌 Logo 应用领域
ALSC 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
19页 418K
描述
3.3V 64K x 32/36 Flow Through Synchronous SRAM

AS7C3364FT36B-75TQCN 数据手册

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AS7C3364FT32B  
AS7C3364FT36B  
February 2005  
®
3.3V 64K × 32/36 Flow Through Synchronous SRAM  
Features  
• Multiple chip enables for easy expansion  
• 3.3V core power supply  
• Organization: 65,536 words × 32 or 36 bits  
• Fast clock to data access: 6.5/7.5/8.0/10.0 ns  
• Fast OE access time: 3.5/4.0 ns  
• Fully synchronous flow through operation  
• Asynchronous output enable control  
• Available in 100-pin TQFP package  
• Individual byte write and Global write  
• 2.5V or 3.3V I/O operation with separate V  
• Linear or interleaved burst control  
• Snooze mode for reduced power standby  
• Common data inputs and data outputs  
DDQ  
Logic block diagram  
LBO  
CLK  
ADV  
CLK  
CE  
Burst logic  
ADSC  
ADSP  
CLR  
64K × 32/36  
Memory  
array  
18  
16  
18  
18  
D
CE  
CLK  
Q
A
[17:0]  
Address  
register  
36/32  
36/32  
GWE  
BWE  
BWd  
D
Q
DQd  
Byte write  
registers  
CLK  
D
Q
DQc  
Byte write  
registers  
BWc  
BWb  
BWa  
CLK  
D
Q
DQb  
Byte write  
registers  
CLK  
D
Q
DQa  
Byte write  
4
registers  
CLK  
CE0  
CE1  
OE  
Output  
buffer  
D
Q
Q
CE2  
Input  
registers  
CLK  
Enable  
register  
CE  
CLK  
D
Enable  
Power  
down  
delay  
register  
CLK  
ZZ  
36/32  
OE  
DQ[a:d]  
Selection guide  
–65  
-75  
8.5  
7.5  
250  
85  
-80  
10  
-10  
12  
Units  
ns  
Minimum cycle time  
7.5  
6.5  
275  
90  
Maximum clock access time  
Maximum operating current  
Maximum standby current  
8.0  
215  
75  
10.0  
185  
75  
ns  
mA  
mA  
mA  
Maximum CMOS standby current (DC)  
30  
30  
30  
30  
2/8/05; v.1.2  
Alliance Semiconductor  
P. 1 of 19  
Copyright © Alliance Semiconductor. All rights reserved.  

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