Datasheet > AS7C33512NTF18A

AS7C33512NTF18A

更新时间： 2024-11-23 23:00:35

品牌	Logo	应用领域
ALSC		静态存储器
页数	文件大小	规格书
18页	426K
描述
3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD

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AS7C33512NTF18A 数据手册

AS7C33512NTF18A

November 2004

3.3V 512K×18 Flowthrough Synchronous SRAM with NTD^TM

Features

• Organization: 524,288 words × 18 bits

• NTD^™architecture for efficient bus operation

• Fast clock to data access: 7.5/8.5/10 ns

• Fast OE access time: 3.5/4.0 ns

• Fully synchronous operation

• Clock enable for operation hold

• Multiple chip enables for easy expansion

• 3.3 core power supply

• 2.5V or 3.3V I/O operation with separate V_DDQ

• 30 mW typical standby power

• Self-timed write cycles

• Flow-through mode

• Asynchronous output enable control

• Available in 100-pin TQFP

• Interleaved or linear burst modes

• Snooze mode for standby operation

• Byte write enables

Logic Block Diagram

A[18:0]

Address

burst logic

CLK

CE0

CE1

CE2

Write delay

addr. registers

CLK

R/W

BWa

BWb

Control

logic

CLK

ADV / LD

512K x 18

SRAM

array

LBO

CLK

DQ [a,b]

Data

input

CLK

CEN

Output

buffer

DQ [a,b]

Selection Guide

-75

8.5

7.5

280

120

-85

-10

Units

Minimum cycle time

8.5

260

110

Maximum clock access time

Maximum operating current

Maximum standby current

220

100

Maximum CMOS standby current (DC)

11/8/04, v. 1.1

Alliance Semiconductor

P. 1 of 18

12 3 4 5 6 7...18

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与AS7C33512NTF18A相关器件

型号	品牌	获取价格	描述	数据表
AS7C33512NTF18A-10TQC	ALSC	获取价格	3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD
AS7C33512NTF18A-10TQC	ISSI	获取价格	ZBT SRAM, 512KX18, 10ns, CMOS, PQFP100, 14 X 20 MM, TQPF-100
AS7C33512NTF18A-10TQCN	ISSI	获取价格	ZBT SRAM, 512KX18, 10ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100
AS7C33512NTF18A-10TQCN	ALSC	获取价格	3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD
AS7C33512NTF18A-10TQI	ISSI	获取价格	ZBT SRAM, 512KX18, 10ns, CMOS, PQFP100, 14 X 20 MM, TQPF-100
AS7C33512NTF18A-10TQI	ALSC	获取价格	3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD
AS7C33512NTF18A-10TQIN	ISSI	获取价格	ZBT SRAM, 512KX18, 10ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100
AS7C33512NTF18A-10TQIN	ALSC	获取价格	3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD
AS7C33512NTF18A-65TQC	ISSI	获取价格	ZBT SRAM, 512KX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, TQPF-100
AS7C33512NTF18A-65TQCN	ISSI	获取价格	ZBT SRAM, 512KX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQPF-100