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AS7C33512NTD36A-166TQIN

更新时间： 2024-11-23 23:00:35

品牌	Logo	应用领域
ALSC		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
18页	426K
描述
3.3V 512K x 32/36 Pipelined SRAM with NTD

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April 2005

AS7C33512NTD32A

AS7C33512NTD36A

3.3V 512K × 32/36 Pipelined SRAM with NTD^TM

Features

• Clock enable for operation hold

• Multiple chip enables for easy expansion

• 3.3V core power supply

• 2.5V or 3.3V I/O operation with separate V

• Self-timed write cycles

• Organization: 524,288 words × 32 or 36 bits

™

• NTD architecture for efficient bus operation

• Fast clock speeds to 166 MHz

DDQ

• Fast clock to data access: 3.4/3.8 ns

• Fast OE access time: 3.4/3.8 ns

• Fully synchronous operation

• Asynchronous output enable control

• Available in 100-pin TQFP packages

• Individual byte write and global write

• Interleaved or linear burst modes

• Snooze mode for standby operation

Logic block diagram

A[18:0]

Address

Burst logic

CLK

CE0

CE1

CE2

Write delay

addr. registers

CLK

R/W

BWa

Control

logic

CLK

BWb

BWc

BWd

ADV / LD

LBO

512K x 32/36

SRAM

CLK

Array

32/36

DQ[a,b,c,d]

Data

Input

32/36

CLK

32/36

CLK

CEN

CLK

Output

32/36

DQ[a,b,c,d]

Selection guide

-166

-133

7.5

133

3.8

275

Units

Minimum cycle time

Maximum clock frequency

Maximum clock access time

Maximum operating current

Maximum standby current

166

3.4

300

MHz

Maximum CMOS standby current (DC)

4/21/05, v 2.8

Alliance Semiconductor

P. 1 of 18

12 3 4 5 6 7...18

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与AS7C33512NTD36A-166TQIN相关器件

型号	品牌	获取价格	描述	数据表
AS7C33512NTD36A-200BC	ISSI	获取价格	ZBT SRAM, 512KX36, 7.5ns, CMOS, PBGA165, BGA-165
AS7C33512NTD36A-200BI	ISSI	获取价格	ZBT SRAM, 512KX36, 7.5ns, CMOS, PBGA165, BGA-165
AS7C33512NTD36A-200TQC	ISSI	获取价格	ZBT SRAM, 512KX36, 7.5ns, CMOS, PQFP100, TQFP-100
AS7C33512NTD36A-200TQI	ISSI	获取价格	ZBT SRAM, 512KX36, 7.5ns, CMOS, PQFP100, TQFP-100
AS7C33512NTD36A-250BI	ALSC	获取价格	ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, BGA-165
AS7C33512NTD36A-250TQI	ALSC	获取价格	ZBT SRAM, 512KX36, 6.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
AS7C33512NTF18A	ALSC	获取价格	3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD
AS7C33512NTF18A-10TQC	ALSC	获取价格	3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD
AS7C33512NTF18A-10TQC	ISSI	获取价格	ZBT SRAM, 512KX18, 10ns, CMOS, PQFP100, 14 X 20 MM, TQPF-100
AS7C33512NTF18A-10TQCN	ISSI	获取价格	ZBT SRAM, 512KX18, 10ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100