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AS7C332MFT18A-75TQC PDF预览

AS7C332MFT18A-75TQC

更新时间: 2024-01-20 19:51:51
品牌 Logo 应用领域
ALSC 内存集成电路静态存储器
页数 文件大小 规格书
19页 512K
描述
3.3V 2M x 18 Flow-through synchronous SRAM

AS7C332MFT18A-75TQC 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.51
Is Samacsys:N最长访问时间:7.5 ns
其他特性:FLOW-THROUGH ARCHITECTUREJESD-30 代码:R-PQFP-G100
JESD-609代码:e3长度:20 mm
内存密度:37748736 bit内存集成电路类型:STANDARD SRAM
内存宽度:18功能数量:1
端子数量:100字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX18封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):245认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

AS7C332MFT18A-75TQC 数据手册

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December 2004  
AS7C332MFT18A  
®
3.3V 2M × 18 Flow-through synchronous SRAM  
Features  
• Organization: 2,097152 words × 18 bits  
• Fast clock to data access: 7.5/8.5/10 ns  
• Fast OE access time: 3.5/4.0 ns  
• Fully synchronous flow-through operation  
• Asynchronous output enable control  
• Available in 100-pin TQFP package  
• Individual byte write and global write  
• Multiple chip enables for easy expansion  
• 3.3V core power supply  
• 2.5V or 3.3V I/O operation with separate V  
• Linear or interleaved burst control  
• Snooze mode for reduced power-standby  
• Common data inputs and data outputs  
DDQ  
Logic block diagram  
LBO  
CLK  
ADV  
ADSC  
ADSP  
CLK  
CS  
Burst logic  
2M x 18  
CLR  
Memory  
array  
21 19  
21  
21  
Q
D
A[20:0]  
Address  
CS  
register  
CLK  
18  
18  
2
GWE  
BWb  
D
DQb  
Q
Byte Write  
registers  
BWE  
BWa  
CLK  
D
Q
DQa  
Byte Write  
registers  
CLK  
CE0  
CE1  
OE  
Output  
registers  
D
Q
Q
Input  
registers  
Enable  
register  
CE  
CLK  
CE2  
CLK  
CLK  
D
Enable  
delay  
register  
CLK  
Power  
down  
ZZ  
OE  
18  
DQ[a,b]  
Selection guide  
-75  
8.5  
7.5  
325  
140  
90  
-85  
10  
-10  
12  
Units  
ns  
Minimum cycle time  
Maximum clock access time  
Maximum operating current  
Maximum standby current  
Maximum CMOS standby current (DC)  
8.5  
300  
130  
90  
10  
ns  
275  
130  
90  
mA  
mA  
mA  
12/23/04, v 1.3  
Alliance Semiconductor  
1 of 19  
Copyright © Alliance Semiconductor. All rights reserved.  

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