January 2002
AS7C33128PFS16A
AS7C33128PFS18A
®
3.3V 128K × 16/18 pipeline burst synchronous SRAM
Features
• Organization: 131,072words × 16 or 18 bits
• Fast clock speeds to 200MHz in LVTTL/LVCMOS
• Fast clock to data access: 3.0/3.1/3.5/4.0/5.0 ns
• Fast OE access time: 3.0/3.1/3.5/4.0/5.0 ns
• Fully synchronous register-to-register operation
• “Flow-through” mode
• Byte write enables
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate V
• 30 mW typical standby power in power down mode
DDQ
®
• Single-cycle deselect
• Pentium® compatible architecture and timing
• Asynchronous output enable control
• Economical 100-pin TQFP package
1. Pentium is a registered trademark of Intel Corporation. NTD™
1
is a trademark of Alliance Semiconductor Corporation. All trade-
marks mentioned in this document are the property of their respec-
tive owners.
Logic block diagram
Pin arrangement
LBO
CLK
ADV
CLK
CS
Burst logic
17 15
128K × 16/18
Memory
ADSC
ADSP
CLR
A16
NC
NC
V
SSQ
NC
DQpa/NC
DQa
DQa
NC
NC
NC
1
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
17
17
2
AddresQs
D
array
A[16:0]
3
CS
V
4
register
DDQ
V
DDQ
V
5
SSQ
NC
CLK
6
NC
7
16/18
16/18
DQb
DQb
8
9
GWE
BW
b
D
Q
V
DDQ
DQb
V
10
11
SSQ
SSQ
V
V
DDQ
DQb 12
DQb 13
Byte Write
registers
DQa
DQa
VSS
BWE
CLK
FT
14
15
16
17
D
Q
TQFP 14 × 20mm
DQa
NC
V
DD
2
BW
Byte Write
registers
V
ZZ
NC
a
DD
V
SS
CLK
DQa
DQa
DQb 18
DQb 19
CE0
CE1
CE2
OE
D EnableQ
register
Input
V
SSQ
V
20
21
DDQ
DDQ
Output
V
V
SSQ
registers
registers
DQa
DQa
NC
DQb 22
DQb 23
CE
CLK
CLK
CLK
DQpb/NC
NC
24
25
26
27
28
29
30
NC
D EnableQ
delay
V
DDQ
V
Power
down
SSQ
SSQ
ZZ
V
V
register
DDQ
NC
NC
NC
NC
NC
NC
CLK
OE
DATA [17:0]
DATA [15:0]
FT
Note: pins 24, 74 are NC for ×16.
Selection guide
–200
5
–183
–166
6
–133
7.5
133
4
–100
10
Units
Minimum cycle time
5.4
183
3.1
540
140
30
ns
MHz
ns
Maximum pipelined clock frequency
200
3
166
3.5
475
130
30
100
5
Maximum pipelined clock access time
Maximum operating current
570
160
30
425
100
30
325
90
mA
mA
mA
Maximum standby current
Maximum CMOS standby current (DC)
30
1/21/02; v.1.1
Alliance Semiconductor
P. 1 of 12
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