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AS7C33128NTF18B PDF预览

AS7C33128NTF18B

更新时间: 2024-11-26 23:04:23
品牌 Logo 应用领域
ALSC 静态存储器
页数 文件大小 规格书
19页 429K
描述
3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

AS7C33128NTF18B 数据手册

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April 2005  
AS7C33128NTF18B  
®
3.3V 128K x 18 Flowthrough Synchronous SRAM with NTDTM  
Features  
• Byte write enables  
• Clock enable for operation hold  
• Multiple chip enables for easy expansion  
• 3.3V core power supply  
• 2.5V or 3.3V I/O operation with separate V  
• Self-timed write cycles  
• Organization: 131,072 words × 18 bits  
• NTD architecture for efficient bus operation  
• Fast clock to data access: 7.5/8.0/10.0 ns  
• Fast OE access time: 3.5/4.0 ns  
• Fully synchronous operation  
DDQ  
• Interleaved or linear burst modes  
• Snooze mode for standby operation  
• Flow-through mode  
• Asynchronous output enable control  
• Available in 100-pin TQFP package  
Logic block diagram  
17  
17  
A[16:0]  
Q
D
Address  
register  
burst logic  
CLK  
D
Q
CE0  
CE1  
CE2  
Write delay  
addr. registers  
CLK  
17  
R/W  
BWa  
BWb  
Control  
logic  
CLK  
ADV / LD  
128K x 18  
LBO  
ZZ  
SRAM  
array  
CLK  
18  
18  
DQ [a,b]  
Data  
input  
register  
D
Q
18  
18  
CLK  
18  
CLK  
CEN  
Output  
buffer  
OE  
18  
OE  
DQ [a,b]  
Selection guide  
-75  
8.5  
7.5  
260  
110  
30  
-80  
-10  
12  
Units  
ns  
Minimum cycle time  
10  
8.0  
230  
100  
30  
Maximum clock access time  
Maximum operating current  
Maximum standby current  
10  
ns  
200  
90  
mA  
mA  
mA  
Maximum CMOS standby current (DC)  
30  
4/28/05, v 1.0  
Alliance Semiconductor  
P. 1 of 19  
Copyright © Alliance Semiconductor. All rights reserved.  

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