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AS7C251MPFD32A-166TQIN PDF预览

AS7C251MPFD32A-166TQIN

更新时间: 2024-11-26 23:00:31
品牌 Logo 应用领域
ALSC 静态存储器
页数 文件大小 规格书
19页 523K
描述
2.5V 1M x 32/36 pipelined burst synchronous SRAM

AS7C251MPFD32A-166TQIN 数据手册

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February 2005  
AS7C251MPFD32A  
AS7C251MPFD36A  
®
2.5V 1M × 32/36 pipelined burst synchronous SRAM  
Features  
• Individual byte write and global write  
• Multiple chip enables for easy expansion  
• 2.5V core power supply  
• Linear or interleaved burst control  
• Snooze mode for reduced power-standby  
• Common data inputs and data outputs  
• Organization: 1,048,576 words × 32 or 36 bits  
• Fast clock speeds to 200 MHz  
• Fast clock to data access: 3.1/3.5/3.8 ns  
• Fast OE access time: 3.1/3.5/3.8 ns  
• Fully synchronous register-to-register operation  
• Double-cycle deselect  
• Asynchronous output enable control  
• Available in 100-pin TQFP package  
Logic block diagram  
LBO  
CLK  
ADV  
ADSC  
ADSP  
CLK  
CE  
CLR  
Q0  
Burst logic  
1M × 32/36  
Q1  
Memory  
array  
2
2
D
CE  
CLK  
Q
A[19:0]  
Address  
20  
20  
18  
20  
register  
32/36  
32/36  
GWE  
BWE  
BWd  
D
Q
DQd  
Byte write  
registers  
CLK  
D
Q
DQc  
Byte write  
registers  
BWc  
BWb  
CLK  
D
Q
DQb  
Byte write  
registers  
CLK  
D
Q
DQa  
Byte write  
registers  
4
BWa  
CLK  
CE0  
CE1  
OE  
Output  
registers  
D
Q
Q
CE2  
Input  
registers  
CLK  
Enable  
register  
CE  
CLK  
CLK  
D
Enable  
Power  
down  
delay  
register  
CLK  
ZZ  
32/36  
DQ[a:d]  
OE  
Selection guide  
-200  
5
-166  
-133  
7.5  
Units  
ns  
Minimum cycle time  
6
Maximum clock frequency  
Maximum clock access time  
Maximum operating current  
Maximum standby current  
200  
3.1  
450  
170  
90  
166  
3.5  
400  
150  
90  
133  
3.8  
MHz  
ns  
350  
140  
90  
mA  
mA  
mA  
Maximum CMOS standby current (DC)  
2/11/05, v.1.1  
Alliance Semiconductor  
1 of 19  
Copyright © Alliance Semiconductor. All rights reserved.  

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