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AS7C184098LL-70BI PDF预览

AS7C184098LL-70BI

更新时间: 2024-11-25 18:59:03
品牌 Logo 应用领域
ALSC 静态存储器内存集成电路
页数 文件大小 规格书
10页 184K
描述
Standard SRAM, 256KX16, 70ns, CMOS, PBGA48

AS7C184098LL-70BI 数据手册

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Smallest footprint packages  
- 48 ball FBGA  
- 400 mil TSOP II  
Center power and ground pins for low noise  
ESD protection 2000 volts  
• Organization: 262,144 words × 16 bits  
• Intelliwatt™ active power reduction circuitry  
• 1.65V to 1.95V operating range  
• 35/ 55/ 70/ 100 ns address access time  
Low power consumption  
Latch-up current 200 mA  
- Active: 40 mW max (100 ns cycle) 1.95 V  
- Standby: 90 µW max  
- Very low DC component in active power, 100 µA  
• Individual byte read/ write controls  
• 1.2V data retention  
• Industrial temperature range available (-40 to +85 °C)  
• Other voltage versions available  
- 2.7V to 3.6V (AS7C34098LL)  
- 2.3V to 3.0V (AS7C254098LL)  
Easy memory expansion with CE, OE inputs  
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TSOP II  
A0  
A1  
A2  
A3  
A4  
A6  
A7  
A8  
A12  
A13  
VDD  
A0  
A1  
1
2
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A17  
A16  
A15  
OE  
UB  
LB  
I/O15  
I/O14  
I/O13  
I/O12  
VSS  
VDD  
I/O11  
I/O10  
1024 × 256 × 16  
V
SS  
A2  
3
A3  
4
Array  
A4  
5
(4,194,304)  
CE  
6
I/O0  
I/O1  
I/O2  
I/O3  
VDD  
VSS  
I/O4  
I/O5  
I/O6  
I/O7  
WE  
A5  
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
I/ O0–I/ O7  
I/ O8–I/ O15  
I/ O  
buffer  
Control circuit  
Column decoder  
WE  
I/O9  
I/O8  
NC  
A14  
A13  
A12  
A11  
A10  
A6  
A7  
A8  
A9  
UB  
OE  
LB  
CE  
48-CSP Ball-Grid-Array Package  
1
2
3
4
5
6
A
B
C
D
E
LB  
OE  
UB  
A
A
A
2
NC  
0
1
I/ O  
I/ O  
A
A
CE  
I/ O  
I/ O  
I/ O  
8
9
3
4
0
2
I/ O  
A
A
6
10  
11  
12  
13  
5
1
V
I/ O  
I/ O  
I/ O  
A
A
I/ O  
V
DD  
SS  
17  
7
3
V
NC  
A
I/ O  
V
SS  
DD  
16  
4
F
I/ O  
A
A
I/ O  
I/ O  
I/ O  
14  
14  
15  
5
6
7
G
H
I/ O  
NC  
A
A
WE  
15  
12  
13  
NC  
A
A
A
A
11  
NC  
8
9
10  
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-35  
35  
10  
45  
45  
-55  
55  
10  
28  
45  
-70  
-100  
100  
10  
Unit  
ns  
Maximum address access time  
Maximum output enable access time  
Maximum operating current  
70  
10  
25  
45  
ns  
20  
mA  
µA  
Maximum CMOS standby current  
45  
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Copyright ©1998 Alliance Semiconductor. All rights reserved.  

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