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AS7C1025B-10TJC PDF预览

AS7C1025B-10TJC

更新时间: 2024-11-23 22:08:23
品牌 Logo 应用领域
ALSC 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 104K
描述
5V 128K X 8 CMOS SRAM (Center power and ground)

AS7C1025B-10TJC 数据手册

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March 2004  
AS7C1025B  
®
5V 128K X 8 CMOS SRAM (Center power and ground)  
Features  
• JEDEC-standard packages  
- 32-pin, 300 mil SOJ  
- 32-pin, 400 mil SOJ  
• Industrial and commercial temperatures  
• Organization: 131,072 x 8 bits  
• High speed  
• ESD protection 2000 volts  
• Latch-up current 200 mA  
- 10/12/15/20 ns address access time  
- 5/6/7/8 ns output enable access time  
• Low power consumption: ACTIVE  
- 605mW / max @ 10 ns  
• Low power consumption: STANDBY  
- 55 mW / max CMOS  
Pin arrangement  
• 6 T 0.18 u CMOS technology  
• Easy memory expansion with CE, OE inputs  
• Center power and ground  
• TTL/LVTTL-compatible, three-state I/O  
Logic block diagram  
32-pin SOJ (300 mil)  
32-pin SOJ (400 mil)  
V
A16  
CC  
A0  
1
32  
31  
30  
A15  
A14  
A13  
OE  
I/O7  
A1  
A2  
A3  
CE  
I/O0  
I/O1  
2
3
4
5
6
7
GND  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
Input buffer  
I/O6  
GND  
A0  
A1  
V
8
CC  
I/O7  
I/O0  
V
GND  
I/O2  
I/O3  
WE  
A4  
A5  
A6  
A7  
9
10  
CC  
A2  
I/O5  
512 x 256 x 8  
Array  
(1,048,576)  
A3  
I/O4  
A12  
A11  
A10  
11  
A4  
A5  
A6  
A7  
A8  
12  
13  
14  
15  
16  
A9  
A8  
18  
17  
WE  
Control  
circuit  
Column decoder  
OE  
CE  
Selection guide  
-10  
10  
5
-12  
12  
6
-15  
-20  
20  
8
Unit  
ns  
Maximum address access time  
Maximum output enable access time  
Maximum operating current  
15  
7
ns  
110  
10  
100  
10  
90  
10  
80  
10  
mA  
mA  
Maximum CMOS standby current  
3/26/04, v. 1.3  
Alliance Semiconductor  
P. 1 of 9  
Copyright © Alliance Semiconductor. All rights reserved.  

AS7C1025B-10TJC 替代型号

型号 品牌 替代类型 描述 数据表
AS7C1025B-10TJCN ALSC

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