Datasheet > AS7C1024L-35JC

AS7C1024L-35JC

更新时间： 2024-11-06 20:23:59

品牌	Logo	应用领域
ALSC		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
8页	294K
描述
Standard SRAM, 128KX8, 35ns, CMOS, PDSO32

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中文翻译

获取价格

数据手册

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AS7C1024L-35JC 数据手册

High Performance

128K×8

AS7C1024

AS7C1024L

CMOS SRAM

128K×8 CMOS SRAM

Features

• Easy memory expansion with CE1, CE2, OE inputs

• Organization: 131,072 words × 8 bits

• TTL-compatible, three-state I/O

• 32-pin JEDEC standard packages

- 300 mil PDIP and SOJ

Socket compatible with 7C256 and 7C512

- 400 mil PDIP and SOJ

- 8 × 20 TSOP

• ESD protection >2000 volts

• Latch-up current > 200 mA

• High speed

- 10/12/15/20/25/35 ns address access time

- 3/3/4/5/6/8 ns output enable access time

• Low power consumption

- Active: 770 mW max (10 ns cycle)

- Standby:55 mW max, CMOS I/O

11 mW max, CMOS I/O, L version

- Very low DC component in active power

• 2.0V data retention (L version)

• Equal access and cycle times

Logic block diagram

Pin arrangement

TSOP 8×20

DIP, SOJ

Vcc

GND

Input buffer

A16

A14

A12

Vcc

A15

CE2

A13

A11

A10

CE1

I/O7

I/O6

I/O5

I/O4

I/O3

I/O7

I/O0

512×256×8

Array

(1,048,576)

I/O0

I/O1

I/O2

GND

CE1

CE2

Column decoder

Control

circuit

A A A A A A A A

9 10 1112 13 14 1516

Selection guide

7C1024-10 7C1024-12 7C1024-15 7C1024-20 7C1024-25 7C1024-35 Unit

Maximum address access time

Maximum output enable access time

Maximum operating current

140

10.0

2.0

130

10.0

2.0

120

10.0

2.0

110

10.0

2.0

100

10.0

2.0

10.0

2.0

Maximum CMOS standby current

Shaded areas contain advance information.

ALLIANCE SEMICONDUCTOR

12 3 4 5 6 7 8

中文翻译

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