Datasheet > 存储 > SRAM> AS7C1024B-20TJI

AS7C1024B-20TJI

更新时间： 2024-11-23 22:53:55

品牌	Logo	应用领域
ALSC		静态存储器
页数	文件大小	规格书
9页	112K
描述
5V 128K X 8 CMOS SRAM

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中文翻译

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数据手册

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AS7C1024B-20TJI 数据手册

March 2004

AS7C1024B

5V 128K X 8 CMOS SRAM

Features

- 300 mil SOJ

- 400 mil SOJ

- 8 × 20mm TSOP 1

- 8 x 13.4mm sTSOP 1

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA

• Industrial and commercial temperatures

• Organization: 131,072 words x 8 bits

• High speed

- 10/12/15/20 ns address access time

- 5/6/7/8 ns output enable access time

• Low power consumption: ACTIVE

- 605 mW / max @ 10 ns

• Low power consumption: STANDBY

- 55 mW / max CMOS

• 6T 0.18u CMOS technology

• Easy memory expansion with CE1, CE2, OE inputs

• TTL/LVTTL-compatible, three-state I/O

• 32-pin JEDEC standard packages

Pin arrangement

32-pin SOJ (300 mil)

32-pin SOJ (400 mil)

Logic block diagram

A15

CE2

A13

A11

A16

A14

A12

I/O0

I/O1

I/O2

GND

A10

GND

CE1

I/O7

I/O6

I/O5

I/O4

I/O3

Input buffer

I/O7

I/O0

512 x 256 x 8

Array

(1,048,576)

32-pin (8 x 20mm) TSOP I

32-pin (8 x 13.4mm) sTSOP1

A11

A10

CE1

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

A13

CE2

A15

Column decoder

Control

circuit

A16

CE1

CE2

A14

A12

Selection guide

-10

-15

-20

Unit

-12

Maximum address access time

Maximum output enable access

time

Maximum Operating Current

110

100

Maximum CMOS standby Current

3/26/04, v 1.2

Alliance Semiconductor

P. 1 of 9

12 3 4 5 6 7...9

中文翻译

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型号	品牌	获取价格	描述	数据表
AS7C1024B-20TJIN	ALSC	获取价格	5V 128K X 8 CMOS SRAM
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AS7C1024L-10JC	ETC	获取价格	x8 SRAM
AS7C1024L-10PC	ALSC	获取价格	Standard SRAM, 128KX8, 10ns, CMOS, PDIP32
AS7C1024L-10TC	ALSC	获取价格	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32
AS7C1024L-10TPC	ETC	获取价格	x8 SRAM
AS7C1024L-12JC	ETC	获取价格	x8 SRAM
AS7C1024L-12PC	ETC	获取价格	x8 SRAM
AS7C1024L-12TC	ALSC	获取价格	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 8 X 20 MM, TSOP-32
AS7C1024L-12TJC	ALSC	获取价格	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32