October 2000
AS7C1024
AS7C31024
®
5V/3.3V 128K×8 CMOS SRAM (Evolutionary Pinout)
Features
• AS7C1024 (5V version)
• 2.0V data retention
• Easy memory expansion with CE1, CE2, OE inputs
• TTL/LVTTL-compatible, three-state I/O
• 32-pin JEDEC standard packages
- 300 mil SOJ
- 400 mil SOJ
- 8 × 20mm TSOP I
- 8 × 13.4 mm sTSOP I
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
• AS7C31024 (3.3V version)
• Industrial and commercial temperatures
• Organization: 131,072 words × 8 bits
• High speed
- 10/12/15/20 ns address access time
- 5/6/8/10 ns output enable access time
• Low power consumption: ACTIVE
- 825 mW (AS7C1024) / max @ 12 ns
- 360 mW (AS7C31024) / max @ 12 ns
• Low power consumption: STANDBY
- 55 mW (AS7C1024) / max CMOS
- 36 mW (AS7C31024) / max CMOS
Logic block diagram
Pin arrangement
32-pin SOJ (300 mil)
32-pin SOJ (400 mil)
32-pin TSOP I and sTSOP I
(8 x 20mm and 8 x 13.4mm)
VCC
GND
A11
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
OE
32
31
30
29
28
27
26
25
24
23
22
21
20
19
V
A15
CE2
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
CC
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
Input buffer
A8
A13
WE
CE2
A15
WE
A13
A0
A1
A2
A3
A4
A5
A6
A7
A8
A8
I/O7
I/O0
V
A9
CC
NC
A16
A14
A12
A7
A11
512×256×8
9
OE
A10
Array
(1,048,576)
10
11
12
13
14
15
16
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
A6
A1
18
17
A5
A2
A4
A3
WE
Column decoder
Control
circuit
OE
CE1
CE2
Selection guide
AS7C1024-10 AS7C1024-12 AS7C1024-15 AS7C1024-20
AS7C31024-10 AS7C31024-12 AS7C31024-15 AS7C31024-20 Unit
Maximum address access time
Maximum output enable access time
10
5
12
6
15
8
20
10
ns
ns
AS7C1024
AS7C31024
AS7C1024
AS7C31024
150
100
10
140
90
10
10
125
80
10
10
110
75
15
mA
mA
mA
mA
Maximum operating current
Maximum CMOS standby current
10
15
Shaded areas contain advance information.
10/18/00
ALLIANCE SEMICONDUCTOR
1
Copyright ©2000 Alliance Semiconductor. All rights reserved.