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AS6C8016A-55ZIN PDF预览

AS6C8016A-55ZIN

更新时间: 2024-11-01 01:12:11
品牌 Logo 应用领域
ALSC ISM频段静态存储器光电二极管内存集成电路
页数 文件大小 规格书
12页 469K
描述
Process Technology

AS6C8016A-55ZIN 数据手册

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AUGUST 2010  
AS6C8016A  
512K X 16 BIT LOW POWER CMOS SRAM  
FEATURES  
GENERAL DESCRIPTION  
• Process Technology : 0.15μm Full CMOS  
• Organization : 512K x 16 bit  
• Power Supply Voltage : 2.7V ~ 3.6V  
• Low Data Retention Voltage : 1.5V(Min.)  
• Three state output and TTL Compatible  
• Package Type : 48-FPBGA, 44-TSOP2  
The AS6C8016A is fabricated by Alliance ' s  
advanced full CMOS process technology. The families  
support industrial temperature range and Chip Scale  
Package for user flexibility of system design. The families  
also support low data retention voltage for battery back-  
up operation with low data retention current.  
PRODUCT FAMMIILLYY  
Power Dissipation  
Operating  
Temperature  
Vcc  
Range  
PKG  
Type  
Speed  
Standby  
(ISB1, Typ.) (ICC1.Max.)  
Operating  
AS6C8016A  
KGD  
Industrial  
(-40 ~ 85oC)  
2 μA1)  
48-FPBGA  
44-TSOP2  
AS6C8016A-55BIN  
AS6C8016A-55ZIN  
2.7 ~ 3.6 V  
55 ns  
4 mA  
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.  
FUNCTIONAL BLOCK DIAGRAM  
Pre-charge Circuit  
A0  
A1  
A2  
VCC  
VSS  
Memory Array  
A3  
A4  
A5  
2048 x 4096  
A6  
A7  
A8  
A9  
A10  
Data  
Cont  
DQ0 ~ DQ7  
I/O Circuit  
Data  
Cont  
DQ8 ~ DQ15  
Column Select  
A11 A12 A13 A14 A15 A16 A17 A18  
WE  
OE  
UB  
Control Logic  
LB  
CS  
1

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