Datasheet > AS6C8016-55ZIN

AS6C8016-55ZIN

更新时间： 2024-11-01 01:11:51

品牌	Logo	应用领域
ALSC		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
12页	738K
描述
512K X 16 BIT SUPER LOW POWER CMOS SRAM

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中文翻译

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数据手册
替代型号

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AS6C8016-55ZIN 数据手册

JNaOnVuEaMryB2E0R027007

AS6C8016

512K X 8 BIT LOW POWER CMOS SRAM

512K X 16 BIT SUPER LOW POWER CMOS SRAM

FEATURES

GENERAL DESCRIPTION

The AS6C8016 is a 8,388,608-bit low power

CMOS static random access memory organized as

524,288 words by 16 bits. It is fabricated using very

high performance, high reliability CMOS technology.

Its standby current is stable within the range of

operating temperature.

Fast access time : 55ns

Low power consumption:

Operating current : 30mA (TYP.)

Standby current : 6µA (TYP.) LL-version

Single 2.7V ~ 5.5V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data byte control : LB# (DQ0 ~ DQ7)

UB# (DQ8 ~ DQ15)

The AS6C8016 is well designed for low power

application, and particularly well suited for battery

back-up nonvolatile memory application.

Data retention voltage : 1.5V (MIN.)

Lead free and green package available

Package : 44-pin 400 mil TSOP-II

48-ball 6mm x 8mm TFBGA

The AS6C8016 operates from a single power

supply of 2.7V ~ 5.5V and all inputs and outputs are

fully TTL compatible

PRODUCT FAMILY

Product

Family

AS6C8016(I)

Operating

Temperature

-40 ~ 85℃

Power Dissipation

Speed

Vcc Range

2.7 ~ 5.5V

Standby(I^SB1,TYP.) Operating(Icc,TYP.)

55ns

6µA(LL)

30mA

FUNCTIONAL BLOCK DIAGRAM

PIN DESCRIPTION

SYMBOL

DESCRIPTION

Address Inputs

A0 - A18

Vcc

Vss

DQ0 – DQ15 Data Inputs/Outputs

CE#

WE#

OE#

LB#

UB#

V_CC

Chip Enable Input

Write Enable Input

Output Enable Input

Lower Byte Control

Upper Byte Control

Power Supply

512Kx16

MEMORY ARRAY

A0-A18

DECODER

V_SS

Ground

DQ0-DQ7

Lower Byte

I/O DATA

CIRCUIT

COLUMN I/O

DQ8-DQ15

Upper Byte

CE#

WE#

OE#

LB#

CONTROL

CIRCUIT

UB#

NOVEMBER/2007, V 1.0

Alliance Memory Inc.

Page 1 of 12

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AS6C8016-55ZIN 替代型号

型号	品牌	替代类型	描述	数据表
LY62W51216ML-55LLI	LYONTEK	类似代替	512K X 16 BIT LOW POWER CMOS SRAM

与AS6C8016-55ZIN相关器件

型号	品牌	获取价格	描述	数据表
AS6C8016A	ALSC	获取价格	Process Technology
AS6C8016A-55BIN	ALSC	获取价格	Process Technology
AS6C8016A-55ZIN	ALSC	获取价格	Process Technology
AS6UA25616	ETC	获取价格	2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power C
AS6UA25616-100BC	ALSC	获取价格	Standard SRAM, 256KX16, 100ns, CMOS, PBGA48, FBGA-48
AS6UA25616-100BI	ALSC	获取价格	Standard SRAM, 256KX16, 100ns, CMOS, PBGA48, FBGA-48
AS6UA25616-100TC	ALSC	获取价格	Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
AS6UA25616-100TI	ALSC	获取价格	Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
AS6UA25616-55BC	ALSC	获取价格	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, CSP, FBGA-48
AS6UA25616-55TC	ALSC	获取价格	Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44