Datasheet > AS4C8M16S-6TAN

AS4C8M16S-6TAN

更新时间： 2024-11-25 00:58:31

品牌	Logo	应用领域
ALSC		/
页数	文件大小	规格书
55页	1214K
描述
Programmable Mode registers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AS4C8M16S-6TAN 数据手册

AS4C8M16S

128M - 8M x 16 bit Synchronous DRAM (SDRAM)

Confidential

Features

(Rev. 2, Feb. /2014)

Overview

Fast access time from clock: 5/5.4 ns

Fast clock rate: 166/143 MHz

Fully synchronous operation

Internal pipelined architecture

2M word x 16-bit x 4-bank

Programmable Mode registers

- CAS Latency: 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: Sequential or Interleaved

- Burst stop function

The 128Mb SDRAM is

high-speed CMOS



synchronous DRAM containing 128 Mbits. It is

internally configured as 4 Banks of 2M word x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal,

CLK). Read and write accesses to the SDRAM are

burst oriented; accesses start at a selected location

and continue for a programmed number of locations

in a programmed sequence. Accesses begin with the

registration of a BankActivate command which is then

followed by a Read or Write command.

Auto Refresh and Self Refresh

4096 refresh cycles/64ms

CKE power down mode



The SDRAM provides for programmable Read or

Write burst lengths of 1, 2, 4, 8, or full page, with a

burst termination option. An auto precharge function

may be enabled to provide a self-timed row precharge

that is initiated at the end of the burst sequence. The

refresh functions, either Auto or Self Refresh are easy

to use. By having a programmable mode register, the

system can choose the most suitable modes to

maximize its performance. These devices are well

suited for applications requiring high memory

bandwidth and particularly well suited to high

performance PC applications.

Single +3.3V  0.3V power supply

Interface: LVTTL

Operating temperature range

- Commercial (0 ~ 70°C)

- Industrial (-40 ~ 85°C)

- Automotive A2 (-40 ~ 105°C)

54-pin 400 mil plastic TSOP II package

54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package

All parts ROHS Compliant



Table 1. Key Specifications

AS4C16M16S

-6/7

tCK3

tAC3

tRAS

tRC

Clock Cycle time (min.)

Access time from CLK (max.)

Row Active time (min.)

Row Cycle time (min.)

6/7 ns

5.4/5.4 ns

42/42 ns

60/63 ns

Table 2. Ordering Information

Part Number

Frequency

143 MHz

166 MHz

143 MHz

166 MHz

Package

AS4C8M16S-7TCN

AS4C8M16S-6TCN

AS4C8M16S-6TIN

54 pin TSOP II

54 ball TFBGA

54 pin TSOP II

AS4C8M16S-6BIN

AS4C8M16S-7BCN

AS4C8M16S-6TAN

T : indicates TSOP II package

B : indicates TFBGA package

N : indicates Pb free and Halogen free – ROHS compliant parts

C: Commercial I: Industrial A: Automotive temperatures

Confidential

Rev. 2

Feb. /2014

12 3 4 5 6 7...55

中文翻译

下载PDF

与AS4C8M16S-6TAN相关器件

型号	品牌	获取价格	描述	数据表
AS4C8M16S-6TCN	ALSC	获取价格	Programmable Mode registers
AS4C8M16S-6TIN	ALSC	获取价格	Programmable Mode registers
AS4C8M16S-7BCN	ALSC	获取价格	Programmable Mode registers
AS4C8M16S-7TCN	ALSC	获取价格	Programmable Mode registers
AS4C8M16SA	ALSC	获取价格	Fully synchronous operation
AS4C8M16SA-6BAN	ALSC	获取价格	128M â (8M x 16 bit) Synchronous DRAM (SDRA
AS4C8M16SA-6BIN	ALSC	获取价格	Fully synchronous operation
AS4C8M16SA-6TAN	ALSC	获取价格	128M â (8M x 16 bit) Synchronous DRAM (SDRA
AS4C8M16SA-6TCN	ALSC	获取价格	Fully synchronous operation
AS4C8M16SA-6TIN	ALSC	获取价格	Fully synchronous operation

与AS4C8M16S-6TAN相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

AS4C8M16S-6TAN

AS4C8M16S-6TAN 数据手册

与AS4C8M16S-6TAN相关器件

与AS4C8M16S-6TAN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AS4C8M16S-6TAN

AS4C8M16S-6TAN 数据手册

与AS4C8M16S-6TAN相关器件

与AS4C8M16S-6TAN相关文章

您还可以找

您在本页遇到什么问题？