Datasheet > AS4C8M16D1-5TCN

AS4C8M16D1-5TCN

更新时间： 2024-11-25 01:12:51

品牌	Logo	应用领域
ALSC		/
页数	文件大小	规格书
64页	1057K
描述
Fully synchronous operation

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AS4C8M16D1-5TCN 数据手册

AS4C8M16D1

8M x 16 DDR Synchronous DRAM (SDRAM)

Confidential

Features

Released (Rev. 1.1, Feb. /2009)

Overview

The 128Mb DDR AS4C8M16D1 SDRAM is a high-speed

CMOS double data rate synchronous DRAM containing

128 Mbits. It is internally configured as a quad 2M x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal, CK).

Data outputs occur at both rising edges of CK

Fast clock rate: 200MHz



Differential Clock CK &

input

Bi-directional DQS



DLL enable/disable by EMRS

Fully synchronous operation

Internal pipeline architecture

Four internal banks, 2M x 16-bit for each bank

Programmable Mode and Extended Mode registers

- CAS Latency: 2, 2.5, 3

and

.Read and write accesses to the SDRAM are burst

oriented; accesses start at a selected location and

continue for a programmed number of locations in a

programmed sequence. Accesses begin with the

registration of a BankActivate command which is then

followed by a Read or Write command. The DDR SDRAM

provides programmable Read or Write burst lengths of 2,

4, or 8. An auto precharge function may be enabled to

provide a self-timed row precharge that is initiated at the

end of the burst sequence. The refresh functions, either

Auto or Self Refresh are easy to use. In addition, The

DDR SDRAM features programmable DLL option. By

having a programmable mode register and extended

mode register, the system can choose the most suitable

modes to maximize its performance. These devices are

well suited for applications requiring high memory

bandwidth and high performance.

- Burst length: 2, 4, 8

- Burst Type: Sequential & Interleaved

Individual byte write mask control

DM Write Latency = 0

Auto Refresh and Self Refresh

4096 refresh cycles / 64ms

Operating temperature range

- Commercial (0 ~ 70°C)

- Industrial (-40 ~ 85°C)



Precharge & active power down



Power supplies: V

= 2.5V  5%

DD & DDQ

Interface: SSTL_2 I/O Interface

Package: 66 Pin TSOP II, 0.65mm pin pitch

- Pb free and Halogen free

Table 1.Ordering Information

Temperature Temp Range

Part Number

Clock

Data Rate

Package

Commercial

Industrial

0 ~ 70°C

AS4C8M16D1-5TCN 200MHz 400Mbps/pin 66pin TSOPII

-40 ~ 85°C

AS4C8M16D1-5TIN

200MHz 400Mbps/pin 66pin TSOPII

T: indicates TSOP II package

C: indicates Commercial temp.

I: indicates Industrial temp.

N: indicates lead free ROHS

Alliance Memory, Inc.

551 Taylor Way, San Carlos, CA 94070

TEL: (650) 610-6800

FAX: (650) 620-9211

Alliance Memory, Inc. reserves the right to change products or specification without notice.

12 3 4 5 6 7...64

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与AS4C8M16D1-5TCN相关器件

型号	品牌	获取价格	描述	数据表
AS4C8M16D1-5TIN	ALSC	获取价格	Fully synchronous operation
AS4C8M16D1A-5TCN	ALSC	获取价格	Fully synchronous operation
AS4C8M16D1A-5TIN	ALSC	获取价格	Fully synchronous operation
AS4C8M16S	ALSC	获取价格	Programmable Mode registers
AS4C8M16S-6BIN	ALSC	获取价格	Programmable Mode registers
AS4C8M16S-6TAN	ALSC	获取价格	Programmable Mode registers
AS4C8M16S-6TCN	ALSC	获取价格	Programmable Mode registers
AS4C8M16S-6TIN	ALSC	获取价格	Programmable Mode registers
AS4C8M16S-7BCN	ALSC	获取价格	Programmable Mode registers
AS4C8M16S-7TCN	ALSC	获取价格	Programmable Mode registers

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