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AS4C16M16S-7TCN PDF预览

AS4C16M16S-7TCN

更新时间： 2024-02-04 02:47:48
品牌 Logo 应用领域
ALSC 时钟动态存储器ISM频段光电二极管内存集成电路
页数 文件大小 规格书
54页 2323K
描述
Programmable Mode registers

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AS4C16M16S-7TCN 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：TSOP2包装说明：0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOPII-54
针数：54Reach Compliance Code：compliant
风险等级：5.66访问模式：FOUR BANK PAGE BURST
最长访问时间：5.4 ns其他特性：AUTO/SELF REFRESH
JESD-30 代码：R-PDSO-G54长度：22.22 mm
内存密度：268435456 bit内存集成电路类型：SYNCHRONOUS DRAM
内存宽度：16功能数量：1
端口数量：1端子数量：54
字数：16777216 words字数代码：16000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：16MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP2
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）：NOT SPECIFIED座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子节距：0.8 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：10.16 mmBase Number Matches：1

AS4C16M16S-7TCN 数据手册

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AS4C16M16S  
16M x 16 bit Synchronous DRAM (SDRAM)  
Confidential  
Features  
Advanced (Rev. 1.4, Feb. /2012)  
Overview  
The 256Mb SDRAM is a high-speed CMOS  
Fast access time from clock: 5.4/5.4 ns  
Fast clock rate: 166/143 MHz  
Fully synchronous operation  
Internal pipelined architecture  
4M word x 16-bit x 4-bank  
Programmable Mode registers  
- CAS Latency: 2, or 3  
- Burst Length: 1, 2, 4, 8, or full page  
- Burst Type: Sequential or Interleaved  
- Burst stop function  
synchronous DRAM containing 256 Mbits. It is  
internally configured as 4 Banks of 4M word x 16  
DRAM with a synchronous interface (all signals are  
registered on the positive edge of the clock signal,  
CLK). Read and write accesses to the SDRAM are  
burst oriented; accesses start at a selected location  
and continue for a programmed number of locations in  
a programmed sequence. Accesses begin with the  
registration of a BankActivate command which is then  
followed by a Read or Write command.  
The SDRAM provides for programmable Read or  
Write burst lengths of 1, 2, 4, 8, or full page, with a  
burst termination option. An auto precharge function  
may be enabled to provide a self-timed row precharge  
that is initiated at the end of the burst sequence. The  
refresh functions, either Auto or Self Refresh are easy  
to use. By having a programmable mode register, the  
system can choose the most suitable modes to  
maximize its performance. These devices are well  
suited for applications requiring high memory  
bandwidth and particularly well suited to high  
performance PC applications.  
Auto Refresh and Self Refresh  
8192 refresh cycles/64ms  
CKE power down mode  
Single +3.3V power supply  
Interface: LVTTL  
Operating temperature range  
- Commercial (0 ~ 70°C)  
- Industrial (-40 ~ 85°C)  
- Automotive (-40 ~ 105°C)  
54-pin 400 mil plastic TSOP II package  
54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package  
All parts fully ROHS Compliant  
Table 1. Key Specifications  
AS4C16M16S  
-6/7  
tCK3  
tAC3  
tRAS  
tRC  
Clock Cycle time (min.)  
Access time from CLK (max.)  
Row Active time (min.)  
Row Cycle time (min.)  
6/7 ns  
5.4/5.4 ns  
42/49 ns  
60/63 ns  
Table 2. Ordering Information  
Part Number  
Frequency  
143 MHz  
166 MHz  
166 MHz  
166 MHz  
143 MHz  
166 MHz  
Package  
AS4C16M16S-7TCN  
AS4C16M16S-6TCN  
AS4C16M16S-6TIN  
AS4C16M16S-6BIN  
AS4C16M16S-7BCN  
AS4C16M16S-6TAN  
T : indicates TSOP II package  
B : indicates TFBGA package  
54 pin TSOP II  
54 pin TSOP II  
54 pin TSOP II  
54 ball TFBGA  
54 ball TFBGA  
54 pin TSOP II  
N : indicates Pb free and Halogen free – ROHS compliant parts  
C: Commercial I: Industrial A: Automotive temperatures  
Confidential  
1
Rev 3  
Feb. 2014  
1234567...54

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AS4C16M16SA-7TCN ALSC 256M – (16Mx16bit) Synchronous DRAM (SDRAM)

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