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AS4C16M16MD1-6BCN PDF预览

AS4C16M16MD1-6BCN

更新时间: 2024-02-20 11:11:18
品牌 Logo 应用领域
ALSC 动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
55页 6130K
描述
Programmable output buffer driver strength

AS4C16M16MD1-6BCN 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TFBGA,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.24
Factory Lead Time:8 weeks风险等级:1.69
访问模式:FOUR BANK PAGE BURST最长访问时间:5 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PBGA-B60
长度:9 mm内存密度:268435456 bit
内存集成电路类型:DDR DRAM内存宽度:16
湿度敏感等级:3功能数量:1
端口数量:1端子数量:60
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:1.025 mm
自我刷新:YES最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V表面贴装:YES
技术:CMOS端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

AS4C16M16MD1-6BCN 数据手册

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A
S4C16M16MD1  
256Mb MOBILE DDR SDRAM  
TABLE OF CONTENTS  
1. GENERAL DESCRIPTION ................................................................................................... 3  
2. FEATURES........................................................................................................................... 3  
3. PIN DESCRIPTION............................................................................................................... 4  
3.1 Signal Descriptions..........................................................................................................................5  
4. BLOCK DIAGRAM ............................................................................................................... 7  
4.1 Block Diagram.................................................................................................................................7  
4.2 Simplified State Diagram.................................................................................................................8  
5. FUNCTION DESCRIPTION .................................................................................................. 9  
5.1 Initialization......................................................................................................................................9  
5.1.1 Initialization Flow Diagram ..................................................................................................................10  
5.2 Register Definition.........................................................................................................................12  
5.2.1 Mode Register............................................................................................................................12  
5.3 Burst Definition ..............................................................................................................................13  
5.2.1.2 Burst Type ...............................................................................................................................14  
5.2.2 Extended Mode Register............................................................................................................14  
5.2.2.1 Partial Array Self Refresh .......................................................................................................15  
5.2.2.2 Temperature Compensated Self Refresh...............................................................................15  
5.2.2.3 Output Drive Strength .............................................................................................................15  
6. COMMANDS .................................................................................................................... 16  
7.OPERATION........................................................................................................................ 21  
7.1. Deselect........................................................................................................................................21  
7.2. No Operation................................................................................................................................21  
7.4. Active............................................................................................................................................22  
7.5. Read.............................................................................................................................................23  
7.5.1 Read to Read......................................................................................................................................25  
6.5.11 Burst Terminate.................................................................................................................................30  
7.6 Write ..............................................................................................................................................30  
7.6.1 Write to Write .....................................................................................................................................32  
7.7 Precharge......................................................................................................................................36  
7.8 Auto Precharge .............................................................................................................................37  
7.9 Refresh Requirements ..................................................................................................................37  
7.10 Auto Refresh ...............................................................................................................................37  
7.11 Self Referesh...............................................................................................................................37  
7.12 Power Down................................................................................................................................39  
7.13 Deep Power Down ......................................................................................................................41  
7.14 Clock Stop...................................................................................................................................42  
8. ELECTRICAL CHARACTERISTIC......................................................................................43  
Mar, 28, 2013  
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