Datasheet > AS4C16M16D1-5BCN

AS4C16M16D1-5BCN

更新时间： 2024-09-17 01:04:11

品牌	Logo	应用领域
ALSC		时钟动态存储器内存集成电路
页数	文件大小	规格书
67页	2026K
描述
Fully synchronous operation

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AS4C16M16D1-5BCN 数据手册

AS4C16M16D1

16M x 16 bit DDR Synchronous DRAM (SDRAM)

Alliance Memory Confidential

Advanced (Rev. 1.1, Sep. /2011)

Overview

Features

The AS4C16M16D1 SDRAM is a high-speed CMOS

double data rate synchronous DRAM containing 256 Mbits.

It is internally configured as a quad 4M x 16 DRAM with a

synchronous interface (all signals are registered on the

positive edge of the clock signal, CK). Data outputs occur

Fast clock rate: 200MHz



Differential Clock CK &

Bi-directional DQS



DLL enable/disable by EMRS

Fully synchronous operation

Internal pipeline architecture

Four internal banks, 4M x 16-bit for each bank

Programmable Mode and Extended Mode registers

- CAS Latency: 2, 2.5, 3

at both rising edges of CK and

.d Read and write

accesses to the SDRAM are burst oriented; accesses start

at a selected location and continue for a programmed

number of locations in a programmed sequence. Accesses

begin with the registration of a BankActivate command

which is then followed by a Read or Write command. The

AS4C16M16D1 provides programmable Read or Write

burst lengths of 2, 4, or 8. An auto precharge function may

be enabled to provide a self-timed row precharge that is

initiated at the end of the burst sequence. The refresh

functions, either Auto or Self Refresh are easy to use. In

- Burst length: 2, 4, 8

- Burst Type: Sequential & Interleaved

Individual byte-write mask control

DM Write Latency = 0

Auto Refresh and Self Refresh

8192 refresh cycles / 64ms

Operating temperature range

- Commercial (0 ~ 70°C)

- Industrial (-40 ~ 85°C)



addition, AS4C16M16D1 features

programmable DLL

option. By having a programmable mode register and

extended mode register, the system can choose the most

suitable modes to maximize its performance. These

devices are well suited for applications requiring high

memory band-width, result in a device particularly well

suited to high performance main memory and graphics

applications.

Precharge & active power down



Power supplies: V

= 2.5V  0.2V

DD & DDQ

Interface: SSTL_2 I/O Interface

Package: 66 Pin TSOP II, 0.65mm pin pitch

- Pb free and Halogen free

Package: 60-Ball, 8x13x1.2 mm (max) TFBGA

- Pb free and Halogen Free



Table 1.Ordering Information

Temperature Temp Range

Part Number

Clock

Data Rate

Package

Commercial

Industrial

0 ~ 70°C

-40 ~ 85°C

0 ~ 70°C

AS4C16M16D1-5TCN 200MHz 400Mbps/pin 66pin TSOPII

AS4C16M16D1-5TIN 200MHz 400Mbps/pin 66pin TSOPII

AS4C16M16D1-5BCN 200MHz 400Mbps/pin 60ball TFBGA

AS4C16M16D1-5BIN 200MHz 400Mbps/pin 60ball TFBGA

Commercial

Industrial

-40 ~ 85°C

T: indicates TSOP II package

B: indicates TFBGA package

C: indicates Commercial temp.

I: indicates Industrial temp.

N: indicates lead free ROHS

Alliance Memory, Inc.

551 Taylor Way, San Carlos, CA 94070

TEL: (650) 610-6800

FAX: (650) 620-9211

Alliance Memory, Inc. reserves the right to change products or specification without notice.

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与AS4C16M16D1-5BCN相关器件

型号	品牌	获取价格	描述	数据表
AS4C16M16D1-5BIN	ALSC	获取价格	Fully synchronous operation
AS4C16M16D1-5TCN	ALSC	获取价格	Fully synchronous operation
AS4C16M16D1-5TIN	ALSC	获取价格	Fully synchronous operation
AS4C16M16D1A	ALSC	获取价格	66-pin TSOPII PACKAGE
AS4C16M16D1A-5TCN	ALSC	获取价格	Auto Refresh and Self Refresh
AS4C16M16D1A-5TIN	ALSC	获取价格	Auto Refresh and Self Refresh
AS4C16M16D2-25BCN	ALSC	获取价格	fully sunchronous operation
AS4C16M16D2-25BIN	ALSC	获取价格	fully sunchronous operation
AS4C16M16MD1	ALSC	获取价格	Programmable output buffer driver strength
AS4C16M16MD1-6BCN	ALSC	获取价格	Programmable output buffer driver strength

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