5秒后页面跳转
AS29LV400B-80BC PDF预览

AS29LV400B-80BC

更新时间: 2024-11-25 03:18:31
品牌 Logo 应用领域
ALSC /
页数 文件大小 规格书
27页 282K
描述
Flash, 256KX16, 80ns, PBGA48, 6 X 8 MM, 1.20 MM HEIGHT, BGA-48

AS29LV400B-80BC 数据手册

 浏览型号AS29LV400B-80BC的Datasheet PDF文件第2页浏览型号AS29LV400B-80BC的Datasheet PDF文件第3页浏览型号AS29LV400B-80BC的Datasheet PDF文件第4页浏览型号AS29LV400B-80BC的Datasheet PDF文件第5页浏览型号AS29LV400B-80BC的Datasheet PDF文件第6页浏览型号AS29LV400B-80BC的Datasheet PDF文件第7页 
ꢓꢔꢐꢕꢘꢑꢑ  
ꢀꢁꢂꢃꢄꢅꢄꢆꢇꢁꢈꢉꢊꢆꢋꢌꢁꢅꢇꢍꢄꢌꢆ  
ꢎꢏꢃꢈꢉꢐꢑꢑꢒ  
&
ꢙꢗꢉꢚꢒꢐꢛꢉꢜꢉꢝ ꢐꢚ!ꢛꢉꢞꢉꢒ!ꢉ#$%ꢔꢉꢟꢃꢇ'(ꢉ))ꢀ*%$  
ꢟꢂꢇꢍꢏꢁꢂ'  
• Organization: 512Kx8/ 256Kx16  
Sector architecture  
- 200 nA typical automatic sleep mode current  
- 200 nA typical standby current  
- 10 mA typical read current  
- One 16K; two 8K; one 32K; and seven 64K byte sectors  
- One 8K; two 4K; one 16K; and seven 32K word sectors  
- Boot code sector architecture—T (top) or B (bottom)  
- Erase any combination of sectors or full chip  
Single 2.7-3.6V power supply for read/ write operations  
Sector protection  
JEDEC standard software, packages and pinouts  
- 48-pin TSOP  
- 44-pin SO; availability TBD  
- 48-pin BGA  
• Detection of program/ erase cycle completion  
- DQ7 DATA polling  
• High speed 70/ 80/ 90/ 120 ns address access time  
Automated on-chip programming algorithm  
- Automatically programs/ verifies data at specified address  
Automated on-chip erase algorithm  
- Automatically preprograms/ erases chip or specified  
sectors  
- DQ6 toggle bit  
- DQ2 toggle bit  
- RY/ BY output  
Erase suspend/ resume  
- Supports reading data from or programming data  
to a sector not being erased  
• Hardware RESET pin  
Low V write lock-out below 1.5V  
CC  
- Resets internal state machine to read mode  
Low power consumption  
• 10 year data retention at 150C  
• 100,000 write/ erase cycle endurance  
ꢖꢌ-ꢄ+ꢉ.ꢃꢌ+/ꢉ,ꢄꢇ-ꢁꢇꢅ  
Sector protect/  
erase voltage  
switches  
RY/ BY  
DQ0DQ15  
V
CC  
V
SS  
Erase voltage  
generator  
Input/ output  
buffers  
RESET  
Program/ erase  
control  
WE  
BYTE  
Program voltage  
generator  
Command  
register  
STB  
Chip enable  
Output enable  
Logic  
Data latch  
CE  
OE  
A-1  
Y decoder  
Y gating  
STB  
V
detector  
Timer  
CC  
X decoder  
Cell matrix  
A0A17  
ꢔꢂꢃꢂ+ꢍꢄꢌꢆꢉ-ꢏꢄ,ꢂ  
29LV400-70  
29LV400-80  
29LV400-90  
29LV400-120  
Unit  
ns  
Maximum access time  
t
70  
70  
30  
80  
80  
30  
90  
90  
35  
120  
120  
50  
AA  
Maximum chip enable access time  
Maximum output enable access time  
t
ns  
CE  
t
ns  
OE  
8/ 9/ 01; V.0.9.9.1  
ꢓꢃꢃꢄꢇꢆ+ꢂꢉꢔꢂꢅꢄ+ꢌꢆ,ꢏ+ꢍꢌꢁ  
P. 1 of 27  
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉ'ꢉꢊꢋꢋꢅꢌꢍꢎꢏꢉꢐꢏꢑꢅꢎꢁꢍꢒꢓꢎꢈꢁꢄꢔꢉꢊꢋꢋꢉꢄꢅꢆꢇꢈꢕꢉꢄꢏꢕꢏꢄꢖꢏꢒꢔ  

与AS29LV400B-80BC相关器件

型号 品牌 获取价格 描述 数据表
AS29LV400B-80BI ALSC

获取价格

Flash, 256KX16, 80ns, PBGA48, 6 X 8 MM, 1.20 MM HEIGHT, BGA-48
AS29LV400B-80SC ALSC

获取价格

3V 512K x 8/256K x 16 CMOS Flash EEPROM
AS29LV400B-80SI ALSC

获取价格

3V 512K x 8/256K x 16 CMOS Flash EEPROM
AS29LV400B-80TC ALSC

获取价格

3V 512K x 8/256K x 16 CMOS Flash EEPROM
AS29LV400B-80TI ALSC

获取价格

3V 512K x 8/256K x 16 CMOS Flash EEPROM
AS29LV400B-90BC ALSC

获取价格

Flash, 256KX16, 90ns, PBGA48, 6 X 8 MM, 1.20 MM HEIGHT, BGA-48
AS29LV400B-90BI ALSC

获取价格

Flash, 256KX16, 90ns, PBGA48, 6 X 8 MM, 1.20 MM HEIGHT, BGA-48
AS29LV400B-90SC ALSC

获取价格

3V 512K x 8/256K x 16 CMOS Flash EEPROM
AS29LV400B-90SI ALSC

获取价格

3V 512K x 8/256K x 16 CMOS Flash EEPROM
AS29LV400B-90TC ALSC

获取价格

3V 512K x 8/256K x 16 CMOS Flash EEPROM