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AS2

更新时间: 2024-11-24 06:37:43
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1页 16K
描述
SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR

AS2 数据手册

  
SOT89 NPN SILICON PLANAR  
DARLINGTON TRANSISTOR  
BST51  
ISSUE 3 – J ANUARY 1996  
FEATURES  
*
*
Fast Switching  
High hFE  
C
PARTMAKING DETAIL —  
AS2  
E
C
B
SOT89  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
Collector-Base Voltage  
80  
V
V
Collector-Em itter Voltage  
Em itter-Base Voltage  
60  
10  
V
Pea Pulse Current  
1.5  
A
Continuous Collector Current  
Base Current  
IC  
500  
m A  
m A  
W
IB  
100  
1
Power Dissipation at Tam b=25°C  
Operating and Storage Tem perature Range  
Ptot  
Tj:Tstg  
-65 to +150  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
80  
60  
10  
IC=10µA, IE=0  
Collector-Em itter  
Breakdown Voltage  
V
V
IC=10m A, IB=0*  
Em itter-Base  
IE=10µA, IC=0  
Breakdown Voltage  
Em itter Cut-Off Current  
IEBO  
ICES  
10  
10  
VEB=8V, IE=0  
µA  
µA  
Collector-Em itter  
Cut-Off Current  
VCE=60V, IC=0  
Collector-Em itter  
Saturation Voltage  
VCE(sat)  
1.3  
1.3  
V
V
IC=500m A, IB=0.5m A  
IC=500m A, IB=0.5m A  
Tj=150°C  
Base-Em itter  
Saturation Voltage  
VBE(sat)  
hFE  
1.9  
V
IC=500m A, IB=0.5m A  
Static Forward Current  
Transfer Ratio  
1K  
2K  
IC=150m A, VCE=10V*  
IC=-500m A, VCE=-10V*  
Turn On Tim e  
Turn Off Tim e  
ton  
400 Typical  
1.5K Typical  
ns  
ns  
IC=500m A  
IBon=IBoff=0.5m A  
toff  
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice param eter data is available upon request for this device  
For typical graphs see FMMT38A datasheet  
3 - 79  

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