Datasheet > AS1M160120T

AS1M160120T

更新时间： 2024-10-02 18:06:59

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
6页	1312K
描述
TO-247-4

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中文翻译

获取价格

数据手册

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AS1M160120T 数据手册

AS1M160120T

N-Channel Silicon Carbide Power MOSFET

Product Summary

I_D@25℃

V_(BR)DSS

R_DS(on)MAX

1200V

196mΩ@20V

18A

Feature

Application



High Blocking Voltage With Low On-Resistance



Power Supplies

High Speed Switching With Low Capacitance

Easy to Parallel and Simple to Drive

Switch Mode Power Supplies

High Voltage DC/DC Converters

Motor Drivers

Pulsed Power Applications

Package

Marking

Circuit diagram

AS1M160120T

XXXXXX

S1 G

TO-247-4

Absolute maximum ratings (T_C=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DSmax

V_GSmax

V_GSOP

I_D

Test Condition

V_GS= 0V, I_DS=100µA

Absolute maximum values

Recommended operational values

Value

1200

Unit

-10/+25

-5/+20

_GS= 20V,T_C=25℃

_GS= 20V,T_C=100℃

Continuous Drain Current

I_D

Pulsed Drain Current

Power Dissipation

I_DM

Pule width t_plimitea by T_jmax

T_C=25℃,T_J=150℃

P_D

125

℃/W

℃

Thermal Resistance

Junction Temperature

Storage Temperature

R_θJC

R_θJA

T_J

Junction-to-Case

0.9

Junction-to-Ambient

-55 ~ +150

-55~ +150

℃

T_STG

Document ID

AS-3270008

Issued Date

2013/03/08

Revised Date

2021/06/18

Revision

Page.

Page 1

12 3 4 5 6

中文翻译

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