Datasheet > AS1M100650T

AS1M100650T

更新时间： 2024-10-02 18:07:07

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
7页	1855K
描述
TO-247-4

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中文翻译

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AS1M100650T 数据手册

AS1M100650T

N-Channel Silicon Carbide Power MOSFET

Product Summary

I_D@25℃

V_(BR)DSS

R_DS(on)TYP

650V

100mΩ@18V

22A

Feature

Application



High Blocking Voltage With Low R_DS(on)

High Speed Switching With Low Capacitance



Switch Mode Power Supplies

High Voltage DC/DC Converters

DC-AC Inverters

Power Factor Correction Modules

Package

Marking

Circuit diagram

AS1M100650T

XXXXX

S2 S1 G

TO-247-4

Absolute maximum ratings (T_j=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

V_DS

Value

650

Unit

Gate-Source Voltage

V_GSmax

V_GSop

I_D

-8/+22

-4/+18

Recommend Gate-Source Voltage

Continuous Drain Current (T_C=25℃)

Continuous Drain Current (T_C=100℃)

Pulsed Drain Current

I_D

I_DM

Power Dissipation (T_C=25℃)

Thermal Resistance,Junction-to-Case(Typ.)

Junction Temperature

P_D

129

℃/W

℃

R_θJC

T_J

1.16

175

Storage Temperature

T_STG

-40~ +175

Document ID

AS-3270031

Issued Date

2021/03/08

Revised Date

2023/06/28

Revision

Page.

Page 1

12 3 4 5 6 7

中文翻译

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