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AS186-302 PDF预览

AS186-302

更新时间: 2024-01-11 04:39:22
品牌 Logo 应用领域
阿尔法 - ALPHA 开关射频微波光电二极管
页数 文件大小 规格书
3页 125K
描述
GaAs IC High Isolation Positive Control SPDT Non-Reflective Switch DC-4.0 GHz

AS186-302 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:TSSOP8,.16
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:7.97
Is Samacsys:N1dB压缩点:25 dBm
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):30 dBm最大插入损耗:1.25 dB
最小隔离度:35 dBJESD-609代码:e3
安装特点:SURFACE MOUNT功能数量:1
端子数量:8准时:0.05 µs
最大工作频率:4000 MHz最小工作频率:
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:TSSOP8,.16
端口终止:ABSORPTIVE射频/微波设备类型:DIVERSITY SWITCH
子类别:RF/Microwave Switches表面贴装:YES
技术:GAAS端子面层:Tin (Sn)
最大电压驻波比:1.6Base Number Matches:1

AS186-302 数据手册

 浏览型号AS186-302的Datasheet PDF文件第2页浏览型号AS186-302的Datasheet PDF文件第3页 
GaAs IC High Isolation Positive Control  
SPDT Non-Reflective Switch DC–4.0 GHz  
AS186-302  
Features  
MSOP-8 Exposed Pad  
I Positive Voltage Control (0/+3 to 0/+5 V)  
0.072 (1.83 mm)  
0.062 (1.57 mm)  
0.122 (3.09 mm)  
0.114 (2.89 mm)  
0.0256  
(0.650 mm)  
TYP.  
0.073  
(1.85 mm)  
0.063  
I High Isolation (55 dB @ 0.9 GHz  
8
and 1.9 GHz)  
(1.60 mm)  
0.122  
(3.09 mm)  
0.114  
I Miniature MSOP-8 Exposed Pad Package  
I Three Switch Solution for Base Station  
(2.89 mm)  
Synthesizer Switch  
EXPOSED  
PADDLE  
1
PIN 1  
I Non-Reflective  
0.200 (5.08 mm)  
0.114 (4.67 mm)  
INDICATOR  
I Operation to 6 GHz  
0.044  
(1.12 mm) MAX.  
0.012 (0.30 mm)  
0.008 (0.20 mm)  
Description  
0.006 (0.15 mm)  
0.002 (0.05 mm)  
The AS186-302 is a GaAs FET IC SPDT non-reflective  
switch packaged in a MSOP-8 exposed pad plastic  
package for low cost, high isolation commercial  
applications. Ideal building block for base station  
applications where synthesizer isolation is critical.Typical  
applications include GSM, PCS, WCDMA, 2.4 GHz ISM  
and 3.5 GHz wireless local loop.  
Electrical Specifications (0, +5 V), -40 to +85°C  
1
Parameter  
Condition  
Frequency  
Min.  
Typ.  
Max.  
Unit  
Insertion Loss  
DC–2.0 GHz  
DC–3.0 GHz  
DC–4.0 GHz  
0.8  
0.9  
1.0  
1.05  
1.15  
1.25  
dB  
dB  
dB  
2
Isolation  
DC–2.0 GHz  
DC–3.0 GHz  
DC–4.0 GHz  
50  
45  
35  
55  
50  
40  
dB  
dB  
dB  
VSWR (On State)  
DC–2.0 GHz  
DC–4.0 GHz  
1.3:1  
1.3:1  
1.5:1  
1.6:1  
VSWR (Off State)  
0.5–4.0 GHz  
1.35:1  
1.7:1  
3
Switching Characteristics  
Rise, Fall (10/90% or 90/10% RF)  
On, Off (50% CTL to 90/10% RF)  
Video Feedthru  
30  
50  
25  
ns  
ns  
mV  
Input Power for 1 dB Compression  
Intermodulation Intercept Point (IIP3)  
0/+3 V  
0/+5 V  
0.9–4.0 GHz  
0.9–4.0 GHz  
17  
24  
21  
27  
dBm  
dBm  
For Two-tone Input Power +8 dBm  
0/+3 V  
0/+5 V  
0.9–4.0 GHz  
0.9–4.0 GHz  
27  
42  
38  
46  
dBm  
dBm  
Control Voltages  
VLow = 0 to 0.2 V @ 20 µA Max.  
VHigh = +3 V @ 100 µA Max. to +5 V @ 200 µA Max.  
1. All measurements made in a 50 system, unless otherwise specified.  
2. Backside of exposed pad must be connected to RF ground to obtain  
specified isolation.  
3. Video feedthru measured with 3 ns risetime pulse.  
Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com  
1
Specifications subject to change without notice. 2/00A  

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