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ARS50A PDF预览

ARS50A

更新时间: 2024-11-28 14:51:55
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
3页 33K
描述
Button Diodes

ARS50A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-PEDB-N2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.37Is Samacsys:N
其他特性:LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:O-PEDB-N2湿度敏感等级:1
最大非重复峰值正向电流:500 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-50 °C
最大输出电流:50 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):225最大重复峰值反向电压:50 V
最大反向恢复时间:3 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:NO LEAD
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ARS50A 数据手册

 浏览型号ARS50A的Datasheet PDF文件第2页浏览型号ARS50A的Datasheet PDF文件第3页 
®
AR/S50A – AR/S50J  
50A AUTOMOTIVE BUTTON DIODE  
WON-TOP ELECTRONICS  
Features  
Diffused Junction  
Low Leakage  
Low Cost  
High Surge Current Capability  
Low Cost Construction Utilizing Void-Free  
Molded Plastic Technique  
B
A
C
Mechanical Data  
D
Case: AR or ARS, Molded Plastic  
Terminals: Plated Terminals Solderable per  
MIL-STD-202, Method 208  
Polarity: Color Ring Denotes Cathode End  
Weight: 1.8 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 3  
AR  
ARS  
Dim  
Min  
9.70  
5.50  
6.0  
Max  
10.40  
5.70  
6.40  
4.7  
Min  
8.30  
5.50  
6.0  
Max  
8.90  
5.70  
6.40  
4.7  
A
B
C
D
4.2  
4.2  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
AR/S  
50A  
AR/S  
50B  
AR/S  
50D  
AR/S  
50G  
AR/S  
50J  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
400  
280  
600  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
140  
50  
420  
V
A
Average Rectified Output Current  
@TC = 150°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
500  
1.0  
A
Forward Voltage  
@IF = 50A  
VFM  
IRM  
V
Peak Reverse Current  
@TA = 25°C  
5.0  
500  
µA  
At Rated DC Blocking Voltage  
@TA = 100°C  
Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
trr  
CJ  
3.0  
400  
µS  
pF  
RθJC  
TJ, TSTG  
1.0  
°C/W  
°C  
Operating and Storage Temperature Range  
-50 to +175  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
3. Thermal Resistance: Junction to case, single side cooled.  
© Won-Top Electronics Co., Ltd.  
Revision: April, 2012  
www.wontop.com  
1

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