Datasheet > ARL256

ARL256

更新时间： 2024-11-26 06:37:39

品牌	Logo	应用领域
商朗 - LUNSURE		二极管
页数	文件大小	规格书
2页	143K
描述
BUTTON DIODES

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中文翻译

获取价格

数据手册

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ARL256 数据手册

ARL251/ARSL251

THRU

ARL256/ARSL256

Shanghai Lunsure Electronic

Technology Co.,LTD

Tel:0086-21-37185008

Fax:0086-21-57152769

Features

Low leakage

BUTTON DIODES

Low forward voltage drop

High current capability

High forward surge current capability

VOLTAGE RANGE

100 TO 600 VOLTS

CURRENT 25AMPS

ARSL

DIA

.051(1.3)

.047(1.2)

.051(1.3)

.047(1.2)

DIA

.185(4.7)

.165(4.2)

.185(4.7)

.165(4.2)

Mechanical Data

Case: transfer molded plastic

Technology: button with vcauum soldered

Epoxy: UL94V-0 rate flame retardant

Polarity: color ring denotes cathode

Lead: Plated lead, solderable per MIL-STD-202E method 208C

Mounting position: Any

.250(6.4)

.235(6.0)

.250(6.4)

.235(6.0)

Max28.0mm

Min25.4mm

Max28.0mm

Min25.4mm

Weigth: ARL 2.70 grams, ARSL 2.60 grams

.410(10.4)

.380( 9.7)

.346(8.8)

.327(8.2)

DIA

.225(5.7)

.215(5.5)

.225(5.7)

.215(5.5)

DIA

Maximum Ratings and Electrical Charactristics

Dimensions in inches and millimeters

Rating at 25^oC ambient temperature unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load

For capacitive load derate current by 20%

ARL251

ARL252

ARL253

ARL254

ARL256

Parameters

Symbols

Units

ARSL251 ARSL252 ARSL253 ARSL254 ARSL256

V_RRM

V_RMS

V_DC

Maximum repetitive peak reverse voltage

Maximum RM S voltage

100

200

140

200

300

210

300

400

280

400

600

420

600

Volts

Maximum DC blocking voltage

100

Maximum Average rectified forward current

I_o

Amps

at T_C=110^oC

Peak forward surge current 8.3mS single

half sine-wave superimposed on rated load

(JE DEC Method)

I_FSM

400

Amps

I²t

A²S

Rating for fusing(t<8.3ms)

Maximum instantaneous forward voltage

drop at 100A

664

1.1

V_F

Volts

Maximum DC reverse current T_A=25^oC

5.0

450

I_R

at rated DC blocking voltage T_A=150^oC

^oC/W

^oC

R_θJC

Typical thermal resistance

1.0

Operating and storage temperature

-65 to +175

T_J,T_STG

Notes: 1.Enough heatsink must be considered in application.

www. cnelectr .com

中文翻译

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