Datasheet > ARF664S33

ARF664S33

更新时间： 2024-11-18 22:39:15

品牌	Logo	应用领域
POSEICO		二极管快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	107K
描述
FAST RECOVERY DIODE

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中文翻译

获取价格

数据手册

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ARF664S33 数据手册

POSEICO SPA

Via N. Lorenzi 8, 16152 Genova - ITALY

Tel. +39 010 6556234 - Fax +39 010 6557519

Sales Office:

POSEICO

POSEICO SPA

POwer SEmiconductors Italian COrporation

Tel. +39 010 6556775 - Fax +39 010 6442510

FAST RECOVERY DIODE

FOR IGBT,IEGT,GCT APPLICATIONS

SNUBBERLESS OPERATION

ARF664

Repetitive voltage up to

Mean forward current

Surge current

3300 V

1000 A

18 kA

LOW LOSSES SOFT RECOVERY

TARGET SPECIFICATION

gen 03 - ISSUE : 1

Symbol

Characteristic

Conditions

Value

Unit

[°C]

BLOCKING

V RRM

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Repetitive peak reverse current

Permanent DC voltage

125

3300

3400

V RSM

RRM

V=VRRM

V DC LINK

1500

CONDUCTING

F (AV)

FSM

Mean forward current

Surge forward current

I² t

180° sin ,50 Hz, Th=55°C, double side cooled

180° square,50 Hz,Th=55°C,double side cooled

1000

1025

Sine wave, 10 ms

reapplied reverse voltage up to 50% VRSM

125

I² t

1620 x1E3

3.55

A²s

V FM

V F(TO)

r F

Forward voltage

Threshold voltage

Forward slope resistance

Forward current = 1570

125

1.80

0.70

mohm

SWITCHING

Q rr

I rr

t rr

Q rr

I rr

Reverse recovery charge

Peak reverse recovery current

Reverse recovery time

I F = 1000 A

VR = 100 V

di/dt=

250 A/µs

125

µC

I F = 1100 A

µs

µC

di/dt=

VR =

500 A/µs

Reverse recovery charge

Peak reverse recovery current

Softness (s-factor), min

2000

1100

125

E OFF

V FR

Turn off energy dissipation

Peak forward recovery

di/dt=

500 A/µs

MOUNTING

R th(j-h)

R th(c-h)

T j

Thermal impedance

Operating junction temperature

Mounting force

Junction to heatsink, double side cooled

Case to heatsink, double side cooled

°C/kW

°C

00 / 125

22.0 / 24.5

520

Mass

ORDERING INFORMATION : ARF664 S 33

VRRM/100

standard specification

中文翻译

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