Datasheet > ARF648

ARF648

更新时间： 2024-11-18 22:39:15

品牌	Logo	应用领域
POSEICO		二极管快恢复二极管快速恢复二极管
页数	文件大小	规格书
4页	83K
描述
FAST RECOVERY DIODE

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中文翻译

获取价格

数据手册

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ARF648 数据手册

Via N. Lorenzi 8 - I 16152 GENOVA - ITALY

Tel. int. +39/(0)10 6556549 - (0)10 6556488

Fax Int. +39/(0)10 6442510

Ansaldo Trasporti s.p.a.

Unita' Semiconduttori

ANSALDO

Tx 270318 ANSUSE I -

FAST RECOVERY DIODE

ARF648

Repetitive voltage up to

2500 V

2510 A

30 kA

Mean forward current

Surge current

FINAL SPECIFICATION

feb 00 - ISSUE : 01

[°C]

Symbol

Characteristic

Conditions

Value

Unit

BLOCKING

V RRM

V RSM

I RRM

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Repetitive peak reverse current

150 2500

150 2600

V=VRRM

150

100

CONDUCTING

I F (AV)

Mean forward current

180° sin ,50 Hz, Th=55°C, double side cooled

180° square,50 Hz,Th=55°C,double side cooled

2510

I F (AV)

I FSM

I² t

Mean forward current

Surge forward current

I² t

2570

Sine wave, 10 ms

150

reapplied reverse voltage up to 50% VRSM

4500 x1E3

1,4

A²s

V FM

V F(TO)

r F

Forward voltage

Threshold voltage

Forward slope resistance

Forward current =1500

150

0,85

0,300

mohm

SWITCHING

t rr

Q rr

I rr

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Softness (s-factor), min

Peak forward recovery

I F = 1000 A

5,0

µs

µC

di/dt= 250 A/µs

150 1000

600

VR =

50 V

0,5

V FR

di/dt= 100 A/µs

150

MOUNTING

R th(j-h)

T j

Thermal impedance

Operating junction temperature

Mounting force

Junction to heatsink, double side cooled

°C/kW

°C

-30 / 150

35.0 / 40.0

850

Mass

ORDERING INFORMATION : ARF648 S 25

VRRM/100

standard specification

12 3 4

中文翻译

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