Datasheet > ARF526S16

ARF526S16

更新时间： 2024-11-18 22:39:15

品牌	Logo	应用领域
POSEICO		二极管快恢复二极管快速恢复二极管
页数	文件大小	规格书
3页	39K
描述
FAST RECOVERY DIODE

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中文翻译

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数据手册

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ARF526S16 数据手册

Via N. Lorenzi 8 - I 16152 GENOVA - ITALY

Tel. int. +39/(0)10 6556549 - (0)10 6556488

Fax Int. +39/(0)10 6442510

Ansaldo Trasporti s.p.a.

Unita' Semiconduttori

ANSALDO

Tx 270318 ANSUSE I -

FAST RECOVERY DIODE

ARF526

Repetitive voltage up to

1600 V

1345 A

20 kA

Mean forward current

Surge current

TARGET SPECIFICATION

feb 97 - ISSUE : 02

[°C]

Symbol

Characteristic

Conditions

Value

Unit

BLOCKING

V RRM

V RSM

I RRM

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Repetitive peak reverse current

125 1600

125 1700

V=VRRM

125

CONDUCTING

I F (AV)

Mean forward current

180° sin ,50 Hz, Th=55°C, double side cooled

180° square,50 Hz,Th=55°C,double side cooled

1345

I F (AV)

I FSM

I² t

Mean forward current

Surge forward current

I² t

1350

Sine wave, 10 ms

125

reapplied reverse voltage up to 50% VRSM

2000 x1E3

1.6

A²s

V FM

V F(TO)

r F

Forward voltage

Threshold voltage

Forward slope resistance

Forward current =2000

125

1.00

0.300

mohm

SWITCHING

t rr

Q rr

I rr

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Softness (s-factor), min

Peak forward recovery

I F = 1000 A

3.5

250

145

0.5

µs

µC

di/dt= 100 A/µs

125

VR =

50 V

V FR

di/dt= 100 A/µs

MOUNTING

R th(j-h)

T j

Thermal impedance

Operating junction temperature

Mounting force

Junction to heatsink, double side cooled

°C/kW

°C

-30 / 125

18.0 / 20.0

500

Mass

ORDERING INFORMATION : ARF526 S 16

VRRM/100

standard specification

12 3

中文翻译

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