ARF477FLG

更新时间： 2024-11-19 13:05:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体射频场效应晶体管放大器局域网
页数	文件大小	规格书
4页	146K
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数据手册

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ARF477FLG 数据手册

Common Source

Push-Pull Pair

ARF477FL

RF POWER MOSFET

N-CHANNEL PUSH - PULL PAIR

165V 400W 100MHz

The ARF477FL is a matched pair of RF power transistors in a common source conﬁguration. It is designed for high

voltage push-pull or parallel operation in narrow band ISM and MRI power ampliﬁers up to 100 MHz.

• High Performance Push-Pull RF Package.

• Speciﬁed 150 Volt, 65 MHz Characteristics:

• High Voltage Breakdown and Large SOA

•

Output Power = 400 Watts

Gain = 15dB (Class AB)

Efﬁciency = 50% min

for Superior Ruggedness.

•

• Low Thermal Resistance.

• RoHS Compliant

•

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Symbol

Parameter

Ratings

500

Unit

V_DSS

Drain-Source Voltage

V_DGO

I_D

Drain-Gate Voltage

500

Continuous Drain Current @ T_C= 25°C (each device)

Gate-Source Voltage

V_GS

±30

P_D

Total Power Dissipation @ T_C= 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063” from Case for 10 Sec.

750

T_J, T_STG

T_L

-55 to 175

300

°C

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 μA)

On State Drain Voltage ¹(I_D(ON)= 7.5A, V_GS= 10V)

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 50V_DSS, V_GS= 0, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 15V, I_D= 7.5A)

500

V_DS(ON)

2.9

I_DSS

μA

250

±100

I_GSS

g_fs

3.5

0.9

5.6

mhos

g_fs1/g_fa2

V_GS(TH)

Forward Transconductance Match Ratio (V_DS= 15V, I_D= 5A)

Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

1.1

Gate Threshold Voltage Match (V_DS= V_GS, I_D= 50mA)

0.2

Volts

Thermal Characteristics

Symbol

Parameter

Min

Typ

0.18

0.30

Max

0.2

Unit

R_θJC

Junction to Case

°C/W

R_θJHS

Junction to Sink (High Efﬁciency Thermal Joint Compound and Planar Heat Sink Surface.)

0.32

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4

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