Datasheet > ARF476FL_10

ARF476FL_10

更新时间： 2024-11-19 08:34:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	152K
描述
RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR

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ARF476FL_10 数据手册

Common Source

Push-Pull Pair

ARF476FL

RF POWER MOSFET

N-CHANNEL PUSH - PULL PAIR

165V 450W 150MHz

The ARF475FL is a matched pair of RF power transistors in a common source conﬁguration. It is designed for high

voltage push-pull or parallel operation in narrow band ISM and MRI power ampliﬁers up to 150 MHz.

• High Performance Push-Pull RF Package.

• Speciﬁed 150 Volt, 128 MHz Characteristics:

• High Voltage Breakdown and Large SOA

•

Output Power = 900 Watts Peak

Gain = 15dB (Class AB)

Efﬁciency = 50% min

for Superior Ruggedness.

• Low Thermal Resistance.

• RoHS Compliant *

*Pb Free Terminal Finish.

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise speciﬁed.

ARF476FL

500

UNIT

V_DSS

V_DGO

I_D

Drain-Source Voltage

Drain-Gate Voltage

Volts

500

Amps

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

(each device)

V_GS

P_D

±30

Volts

Watts

910

Total Device Dissipation @ T_C= 25°C

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 175

300

°C

Lead Temperature: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS (each device)

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

500

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 μA)

Volts

V_DS_(ON)

2.9

On State Drain Voltage (I_D_(ON)= 5A, V_GS= 10V)

100

500

±100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

μA

Zero Gate Voltage Drain Current (V_DS= 50V, V_GS= 0, T_C= 125°C)

I_GSS

g_fs

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 15V, I_D= 5A)

0.9

3.6

3.3

mhos

1.1

Forward Transconductance Match Ratio (V_DS= 15V, I_D= 5A)

Gate Threshold Voltage (V_DS= V_GS, I_D= 200mA)

Gate Threshold Voltage Match (V_DS= V_GS, I_D= 200mA)

g_fs1g_fs2

V_GS_(TH)

Volts

DV_GS_(TH)

0.2

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN

TYP

0.15

0.30

MAX

0.165

0.33

UNIT

R_θJC

Junction to Case

°C/W

R_θJHS

Junction to Sink (Use High Efﬁciency Thermal Grease and Planar Heat Sink Surface.)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

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