Datasheet > ARF475FL

ARF475FL

更新时间： 2024-11-19 03:19:27

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
4页	91K
描述
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

ARF475FL 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.6	Base Number Matches：	1

ARF475FL 数据手册

Common Source

Push-Pull Pair

ARF475FL

RF POWER MOSFET

N-CHANNEL ENHANCEMENT MODE

165V 300W 150MHz

TheARF475FLisamatchedpairofRFpowertransistorsinacommonsourceconfiguration.Itisdesignedforhighvoltage

push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

• Specified150Volt, 128MHzCharacteristics:

• High Performance Push-Pull RF Package.

•

Output Power = 900 Watts Peak

Gain = 15dB (Class AB)

Efficiency = 50% min

• High Voltage Breakdown and Large SOA

for Superior Ruggedness.

• Low Thermal Resistance.

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

Symbol Parameter

ARF475FL

500

UNIT

Volts

Amps

V_DSS

Drain-Source Voltage

V_DGO

I_D

Drain-Gate Voltage

500

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

(each device)

V_GS

P_D

±30

Volts

Total Device Dissipation @ T_C= 25°C

483

Watts

T_J,T_STG

T_L

-55 to 175

300

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

°C

STATIC ELECTRICAL CHARACTERISTICS (each device)

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 µA)

500

Volts

V_DS

2.9

On State Drain Voltage (I_D_(ON)= 5A, V_GS= 10V)

(ON)

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 50V, V_GS= 0, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 15V, I_D= 5A)

I_DSS

µA

250

±100

I_GSS

g_fs

0.9

3.6

3.3

mhos

g_fs1g_fs2

1.1

Forward Transconductance Match Ratio (V_DS= 15V, I_D= 5A)

Gate Threshold Voltage (V_DS= V_GS, I_D= 200mA)

V_GS

(TH)

Volts

∆V_GS

0.2

Gate Threshold Voltage Match (V_DS= V_GS, I_D= 200mA)

(TH)

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN

TYP

MAX

UNIT

R_θJC

R_θCS

Junction to Case

0.31

°C/W

Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)

0.1

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4

中文翻译

下载PDF

与ARF475FL相关器件

型号	品牌	获取价格	描述	数据表
ARF475FL_10	MICROSEMI	获取价格	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
ARF475LF	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFETs
ARF476FL	MICROSEMI	获取价格	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
ARF476FL_10	MICROSEMI	获取价格	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
ARF477FL	MICROSEMI	获取价格	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
ARF477FL_10	MICROSEMI	获取价格	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
ARF477FLG	MICROSEMI	获取价格	暂无描述
ARF490	POSEICO	获取价格	FAST RECOVERY DIODE
ARF490S56	POSEICO	获取价格	FAST RECOVERY DIODE
ARF500	OHMITE	获取价格	High power density